650 volt 60 amp field stop igbt semiconductor device onsemi FGA60N65SMD suitable for photovoltaic inverters
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Product Description
Product Overview
The FGA60N65SMD is a 650 V, 60 A Field Stop IGBT from ON Semiconductor, leveraging advanced Field Stop IGBT technology for optimal performance in applications demanding low conduction and switching losses. It offers high current capability, a positive temperature coefficient for easy paralleling, and low saturation voltage. This device is designed for demanding applications such as photovoltaic inverters, UPS, welding machines, PFC, and communication power supplies.
Product Attributes
- Brand: ON Semiconductor (formerly Fairchild Semiconductor)
- Certifications: RoHS compliant
Technical Specifications
| Part Number | Description | VCES (V) | VGES (V) | IC @ TC=25C (A) | IC @ TC=100C (A) | ICM (A) | PD @ TC=25C (W) | TJ (C) | Package |
| FGA60N65SMD | 650 V, 60 A Field Stop IGBT | 650 | ±20 | 120 | 60 | 180 | 600 | -55 to +175 | TO-3PN |
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| IGBT Electrical Characteristics | ||||||
| BVCES | Collector-Emitter Breakdown Voltage | VGE = 0 V, IC = 250 μA | 650 | V | ||
| ICES | Collector Cut-off Current | VCE = VCES, VGE = 0 V | 250 | μA | ||
| IGES | G-E Leakage Current | VGE = VGES, VCE = 0 V | ±400 | nA | ||
| VGE(th) | G-E Threshold Voltage | IC = 250 μA, VCE = VGE | 3.5 | 4.5 | 6.0 | V |
| VCE(sat) | Collector-Emitter Saturation Voltage | IC = 60 A, VGE = 15 V | 1.9 | 2.5 | V | |
| VCE(sat) | Collector-Emitter Saturation Voltage | IC = 60 A, VGE = 15 V, TC = 175°C | 2.1 | V | ||
| Cies | Input Capacitance | VCE = 30 V, VGE = 0 V, f = 1 MHz | 2915 | pF | ||
| Coes | Output Capacitance | VCE = 30 V, VGE = 0 V, f = 1 MHz | 270 | pF | ||
| Cres | Reverse Transfer Capacitance | VCE = 30 V, VGE = 0 V, f = 1 MHz | 85 | pF | ||
| td(on) | Turn-on Delay Time | VCC = 400 V, IC = 60 A, RG = 3 Ω, VGE = 15 V, Inductive Load, TC = 25°C | 18 | 27 | ns | |
| tr | Rise Time | VCC = 400 V, IC = 60 A, RG = 3 Ω, VGE = 15 V, Inductive Load, TC = 25°C | 47 | 70 | ns | |
| td(off) | Turn-off Delay Time | VCC = 400 V, IC = 60 A, RG = 3 Ω, VGE = 15 V, Inductive Load, TC = 25°C | 104 | 146 | ns | |
| tf | Fall Time | VCC = 400 V, IC = 60 A, RG = 3 Ω, VGE = 15 V, Inductive Load, TC = 25°C | 50 | 68 | ns | |
| Eon | Turn-on Switching Loss | VCC = 400 V, IC = 60 A, RG = 3 Ω, VGE = 15 V, Inductive Load, TC = 25°C | 1.54 | 2.31 | mJ | |
| Eoff | Turn-off Switching Loss | VCC = 400 V, IC = 60 A, RG = 3 Ω, VGE = 15 V, Inductive Load, TC = 25°C | 0.45 | 0.60 | mJ | |
| Ets | Total Switching Loss | VCC = 400 V, IC = 60 A, RG = 3 Ω, VGE = 15 V, Inductive Load, TC = 25°C | 1.99 | 2.91 | mJ | |
| td(on) | Turn-on Delay Time | VCC = 400 V, IC = 60 A, RG = 3 Ω, VGE = 15 V, Inductive Load, TC = 175°C | 18 | ns | ||
| tr | Rise Time | VCC = 400 V, IC = 60 A, RG = 3 Ω, VGE = 15 V, Inductive Load, TC = 175°C | 41 | ns | ||
| td(off) | Turn-off Delay Time | VCC = 400 V, IC = 60 A, RG = 3 Ω, VGE = 15 V, Inductive Load, TC = 175°C | 115 | ns | ||
| tf | Fall Time | VCC = 400 V, IC = 60 A, RG = 3 Ω, VGE = 15 V, Inductive Load, TC = 175°C | 48 | ns | ||
| Eon | Turn-on Switching Loss | VCC = 400 V, IC = 60 A, RG = 3 Ω, VGE = 15 V, Inductive Load, TC = 175°C | 2.08 | mJ | ||
| Eoff | Turn-off Switching Loss | VCC = 400 V, IC = 60 A, RG = 3 Ω, VGE = 15 V, Inductive Load, TC = 175°C | 0.78 | mJ | ||
| Ets | Total Switching Loss | VCC = 400 V, IC = 60 A, RG = 3 Ω, VGE = 15 V, Inductive Load, TC = 175°C | 2.86 | mJ | ||
| Qg | Total Gate Charge | VCE = 400 V, IC = 60 A, VGE = 15 V | 189 | 284 | nC | |
| Qge | Gate-Emitter Charge | VCE = 400 V, IC = 60 A, VGE = 15 V | 20 | 30 | nC | |
| Qgc | Gate-Collector Charge | VCE = 400 V, IC = 60 A, VGE = 15 V | 91 | 137 | nC | |
| Diode Electrical Characteristics | ||||||
| VFM | Diode Forward Voltage | IF = 30 A, TC = 25°C | 2.1 | 2.6 | V | |
| VFM | Diode Forward Voltage | IF = 30 A, TC = 175°C | 1.7 | V | ||
| Erec | Reverse Recovery Energy | IF =30 A, dIF/dt = 200 A/μs, TC = 175°C | 127 | μJ | ||
| trr | Diode Reverse Recovery Time | IF =30 A, dIF/dt = 100 A/μs, TC = 25°C | 47 | ns | ||
| trr | Diode Reverse Recovery Time | IF =30 A, dIF/dt = 200 A/μs, TC = 175°C | 212 | ns | ||
| Qrr | Diode Reverse Recovery Charge | IF =30 A, dIF/dt = 100 A/μs, TC = 25°C | 87 | nC | ||
| Qrr | Diode Reverse Recovery Charge | IF =30 A, dIF/dt = 200 A/μs, TC = 175°C | 933 | nC | ||
| Thermal Characteristics | ||||||
| RθJC(IGBT) | Junction-to-Case Thermal Resistance | 0.25 | °C/W | |||
| RθJC(Diode) | Junction-to-Case Thermal Resistance | 1.1 | °C/W | |||
| RθJA | Junction-to-Ambient Thermal Resistance | 40 | °C/W | |||
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