NIKO-SEM PA410BD N Channel Enhancement Mode Transistor Ideal for Power Switching and Amplification
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The PA410BD is an N-Channel Enhancement Mode Field Effect Transistor designed for various electronic applications. It offers robust performance with high voltage and current handling capabilities, making it suitable for power switching and amplification circuits.
Product Attributes
- Brand: NIKO-SEM
- Package: TO-252
- Certifications: Halogen-Free & Lead-Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Limit | Unit |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDS | 100 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | ID | TC = 25 °C | 10 | A |
| Continuous Drain Current | ID | TC = 100 °C | 7 | A |
| Pulsed Drain Current | IDM | 30 | A | |
| Avalanche Current | IAS | 10 | A | |
| Avalanche Energy | EAS | L = 0.1mH | 5 | mJ |
| Power Dissipation | PD | TC = 25 °C | 35 | W |
| Power Dissipation | PD | TC = 100 °C | 14 | W |
| Junction & Storage Temperature Range | TJ, Tstg | -55 to 150 | °C | |
| THERMAL RESISTANCE RATINGS | ||||
| Junction-to-Case | RθJC | TYPICAL | 3.5 | °C / W |
| Junction-to-Ambient | RθJA | TYPICAL | 62.5 | °C / W |
| ELECTRICAL CHARACTERISTICS | ||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250µA | 100 | V |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250µA | 1.3 - 1.9 - 2.3 | V |
| Gate-Body Leakage | IGSS | VDS = 0V, VGS = ±20V | ±100 | nA |
| Zero Gate Voltage Drain Current | IDSS | VDS = 80V , VGS = 0V | 1 | µA |
| Zero Gate Voltage Drain Current | IDSS | VDS = 80V, VGS = 0V, TJ = 125 °C | 10 | µA |
| Drain-Source On-State Resistance | RDS(ON) | VGS = 4.5V, ID = 5A | 103 - 170 | mΩ |
| Drain-Source On-State Resistance | RDS(ON) | VGS = 10V , ID = 5A | 93 - 140 | mΩ |
| Forward Transconductance | gfs | VDS = 10V, ID = 5A | 13 | S |
| DYNAMIC CHARACTERISTICS | ||||
| Input Capacitance | Ciss | VGS = 0V, VDS = 25V, f = 1MHz | 330 | pF |
| Output Capacitance | Coss | VGS = 0V, VDS = 25V, f = 1MHz | 50 | pF |
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = 25V, f = 1MHz | 22 | pF |
| Total Gate Charge | Qg | VGS = 10V, VDS = 50V, ID = 5A | 8.6 | nC |
| Gate-Source Charge | Qgs | VGS = 10V, VDS = 50V, ID = 5A | 1.2 | nC |
| Gate-Drain Charge | Qgd | VGS = 10V, VDS = 50V, ID = 5A | 3.5 | nC |
| Turn-On Delay Time | td(on) | VDS = 50V ID ≈ 5A, VGS = 10V, RGEN =6Ω | 22 | nS |
| Rise Time | tr | VDS = 50V ID ≈ 5A, VGS = 10V, RGEN =6Ω | 60 | nS |
| Turn-Off Delay Time | td(off) | VDS = 50V ID ≈ 5A, VGS = 10V, RGEN =6Ω | 30 | nS |
| Fall Time | tf | VDS = 50V ID ≈ 5A, VGS = 10V, RGEN =6Ω | 40 | nS |
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||
| Continuous Current | IS | 10 | A | |
| Forward Voltage | VSD | IF = 5A, VGS = 0V | 1.1 | V |
| Reverse Recovery Time | trr | IF = 5A, dlF/dt = 100A / μS | 25 | nS |
| Reverse Recovery Charge | Qrr | IF = 5A, dlF/dt = 100A / μS | 25 | nC |
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina