PANJIT PJD11N06A AU L2 000A1 60V N Channel Enhancement Mode MOSFET with AEC Q101 and RoHS compliance
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The PPJD11N06A-AU is a 60V N-Channel Enhancement Mode MOSFET designed for high-performance applications. It features low on-resistance (RDS(ON)), high switching speed, improved dv/dt capability, and low gate charge. This MOSFET is AEC-Q101 qualified and complies with EU RoHS 2.0 and IEC 61249 standards, making it suitable for lead-free and green manufacturing processes. Its robust design and thermal characteristics ensure reliable operation in various conditions.
Product Attributes
- Brand: Panjit
- Certifications: AEC-Q101 qualified, EU RoHS 2.0 compliant, Green molding compound as per IEC 61249 standard
- Material: Halogen free
- Origin: Not specified
- Color: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
| Maximum Ratings and Thermal Characteristics | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | +20 | V | |||
| Continuous Drain Current (Note 4) | ID | TC=25C | 11 | A | ||
| Continuous Drain Current (Note 4) | ID | TC=100C | 7 | A | ||
| Pulsed Drain Current (Note 1) | IDM | TC=25C | 44 | A | ||
| Power Dissipation | PD | TC=25C | 30 | W | ||
| Power Dissipation | PD | TC=100C | 15 | W | ||
| Continuous Drain Current (Note 4) | ID | TA=25C | 3.7 | A | ||
| Continuous Drain Current (Note 4) | ID | TA=70C | 2.9 | A | ||
| Power Dissipation | PD | TA=25C | 2.4 | W | ||
| Power Dissipation | PD | TA=70C | 1.6 | W | ||
| Single Pulse Avalanche Energy (Note 6) | EAS | 25 | mJ | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | C | ||
| Typical Thermal Resistance (Note 4,5) Junction to Case | RJC | 5 | C/W | |||
| Typical Thermal Resistance (Note 4,5) Junction to Ambient | RJA | 62.5 | C/W | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 60 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 1 | 1.8 | 2.5 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=10V, ID=6A | 53 | 75 | m | |
| Drain-Source On-State Resistance | RDS(on) | VGS=4.5V, ID=3A | 61 | 90 | m | |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | - | 1 | uA | |
| Gate-Source Leakage Current | IGSS | VGS=+20V, VDS=0V | - | +100 | nA | |
| Dynamic | ||||||
| Total Gate Charge | Qg | VDS=48V, ID=6A, VGS=10V (Note 1,2) | 9.3 | - | nC | |
| Gate-Source Charge | Qgs | 2.2 | - | |||
| Gate-Drain Charge | Qg d | 1.9 | - | |||
| Input Capacitance | Ciss | VDS=15V, VGS=0V, f=1MHz | 509 | - | pF | |
| Output Capacitance | Coss | 47 | - | |||
| Reverse Transfer Capacitance | Crss | 23 | - | |||
| Turn-On Delay Time | td(on) | VDD=30V, ID=1A, VGS=10V, RG=3.3 (Note 1,2) | 3.2 | - | ns | |
| Turn-On Rise Time | tr | 9.7 | - | |||
| Turn-Off Delay Time | td(off) | 18.5 | - | |||
| Turn-Off Fall Time | tf | 6.4 | - | |||
| Drain-Source Diode | ||||||
| Maximum Continuous Drain-Source Diode Forward Current | IS | --- | - | 11 | A | |
| Diode Forward Voltage | VSD | IS=1A, VGS=0V | 0.75 | 1 | V | |
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina