IGBT transistor module onsemi FGA40T65SHD 650 volt 40 amp field stop trench technology device

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Product Description

FGA40T65SHD 650 V, 40 A Field Stop Trench IGBT

Leveraging novel field stop IGBT technology, this 3rd generation IGBT offers optimized performance for applications such as solar inverters, UPS, welders, telecom, ESS, and PFC, where low conduction and switching losses are critical. It provides high current capability, a positive temperature coefficient for easy parallel operation, and a low saturation voltage.

Product Attributes

Brand: ON Semiconductor (formerly Fairchild Semiconductor)
Certifications: RoHS Compliant

Technical Specifications

Parameter	Symbol	Test Conditions	Min.	Typ.	Max.	Unit
Absolute Maximum Ratings
Collector to Emitter Voltage	VCES				650	V
Gate to Emitter Voltage	VGES		-20		20	V
Transient Gate to Emitter Voltage			-30		30	V
Collector Current @ TC = 25C	IC				80	A
Collector Current @ TC = 100C	IC				40	A
Pulsed Collector Current @ TC = 25C	ILM (1)	VCC = 400 V, VGE = 15 V, IC =120 A, RG = 30 Inductive Load			120	A
Pulsed Collector Current	ICM (2)	Repetitive rating: Pulse width limited by max. junction temperature			120	A
Diode Forward Current @ TC = 25C	IF				40	A
Diode Forward Current @ TC = 100C	IF				20	A
Pulsed Diode Maximum Forward Current	IFM (2)				120	A
Maximum Power Dissipation @ TC = 25C	PD				268	W
Maximum Power Dissipation @ TC = 100C	PD				134	W
Operating Junction Temperature	TJ		-55		175	C
Storage Temperature Range	Tstg		-55		175	C
Maximum Lead Temp. for soldering Purposes, 1/8 from case for 5 seconds	TL				300	C
Electrical Characteristics of the IGBT (TC = 25C unless otherwise noted)
Collector to Emitter Breakdown Voltage	BVCES	VGE = 0V, IC = 1 mA	650			V
Temperature Coefficient of Breakdown Voltage	BVCES / TJ	IC = 1 mA, Reference to 25C		-0.6		V/C
Collector Cut-Off Current	ICES	VCE = VCES, VGE = 0 V			250	A
G-E Leakage Current	IGES	VGE = VGES, VCE = 0 V			400	nA
G-E Threshold Voltage	VGE(th)	IC = 40 mA, VCE = VGE	3.5	5.5	7.5	V
Collector to Emitter Saturation Voltage	VCE(sat)	IC = 40 A, VGE = 15 V		1.6	2.1	V
Collector to Emitter Saturation Voltage	VCE(sat)	IC = 40 A, VGE = 15 V, TC = 175C		2.14		V
Input Capacitance	Cies	VCE = 30 V, VGE = 0 V, f = 1MHz		1995		pF
Output Capacitance	Coes			70		pF
Reverse Transfer Capacitance	Cres			23		pF
Turn-On Delay Time	td(on)	VCC = 400 V, IC = 40 A, RG = 6 , VGE = 15 V, Inductive Load, TC = 25C		19.2		ns
Rise Time	tr			34.4		ns
Turn-Off Delay Time	td(off)			65.6		ns
Fall Time	tf			9.6		ns
Turn-On Switching Loss	Eon			1010		J
Turn-Off Switching Loss	Eoff			297		J
Total Switching Loss	Ets			1307		J
Turn-On Delay Time	td(on)	VCC = 400 V, IC = 40 A, RG = 6 , VGE = 15 V, Inductive Load, TC = 175C		18.4		ns
Rise Time	tr			32.8		ns
Turn-Off Delay Time	td(off)			71.2		ns
Fall Time	tf			14.4		ns
Turn-On Switching Loss	Eon			1390		J
Turn-Off Switching Loss	Eoff			541		J
Total Switching Loss	Ets			1931		J
Total Gate Charge	Qg	VCE = 400 V, IC = 40 A, VGE = 15 V		72.2		nC
Gate to Emitter Charge	Qge			13.5		nC
Gate to Collector Charge	Qgc			28.5		nC
Electrical Characteristics of the Diode (TC = 25C unless otherwise noted)
Diode Forward Voltage	VFM	IF = 20 A, TC = 25C		2.2	2.8	V
Diode Forward Voltage	VFM	IF = 20 A, TC = 175C		1.94		V
Reverse Recovery Energy	Erec	IF =20 A, dIF/dt = 200 A/s, TC = 175C		50		J
Diode Reverse Recovery Time	trr	TC = 25C		31.8		ns
Diode Reverse Recovery Time	trr	TC = 175C		192		ns
Diode Reverse Recovery Charge	Qrr	TC = 25C		50.6		nC
Diode Reverse Recovery Charge	Qrr	TC = 175C		699		nC
Thermal Characteristics
Thermal Resistance, Junction to Case, Max.	RJC(IGBT)			0.56		C/W
Thermal Resistance, Junction to Case, Max.	RJC(Diode)			1.71		C/W
Thermal Resistance, Junction to Ambient, Max.	RJA			40		C/W