High Current NIKO-SEM PD616BA N Channel Enhancement Mode Field Effect Transistor with TO 252 Package

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Product Description

Product Overview

The PD616BA is a N-Channel Enhancement Mode Field Effect Transistor designed for various applications. It offers a robust performance with key parameters like high drain-source voltage, low on-resistance, and significant continuous drain current capabilities. This transistor is Halogen-Free & Lead-Free, ensuring environmental compliance.

Product Attributes

Brand: NIKO-SEM
Model: PD616BA
Package: TO-252
Certifications: Halogen-Free & Lead-Free

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Units
ABSOLUTE MAXIMUM RATINGS
Drain-Source Voltage	VDS				30	V
Gate-Source Voltage	VGS				±20	V
Continuous Drain Current	ID	TC = 25 °C			55	A
Continuous Drain Current	ID	TC = 100 °C			35	A
Pulsed Drain Current	IDM				120	A
Avalanche Current	IAS				23	A
Avalanche Energy	EAS	L = 0.1mH			27	mJ
Power Dissipation	PD	TC = 25 °C			38	W
Power Dissipation	PD	TC = 100 °C			15	W
Junction & Storage Temperature Range	TJ, Tstg		-55		150	°C
THERMAL RESISTANCE RATINGS
Junction-to-Case	RθJC			3.3		°C / W
Junction-to-Ambient	RθJA			62.5		°C / W
ELECTRICAL CHARACTERISTICS
Drain-Source Breakdown Voltage	V(BR)DSS	VGS = 0V, ID = 250µA	30			V
Gate Threshold Voltage	VGS(th)	VDS = VGS, ID = 250µA	1.35	1.7	3	V
Gate-Body Leakage	IGSS	VDS = 0V, VGS = ±20V			±100	nA
Zero Gate Voltage Drain Current	IDSS	VDS = 24V, VGS = 0V			1	µA
Zero Gate Voltage Drain Current	IDSS	VDS = 20V, VGS = 0V, TJ = 125 °C			10	µA
Drain-Source On-State Resistance	RDS(ON)	VGS = 4.5V, ID = 15A		7	9.5	mΩ
Drain-Source On-State Resistance	RDS(ON)	VGS = 10V , ID = 20A		5.6	7	mΩ
Forward Transconductance	gfs	VDS = 5V, ID = 20A		50		S
Input Capacitance	Ciss	VGS = 0V, VDS = 15V, f = 1MHz		821		pF
Output Capacitance	Coss	VGS = 0V, VDS = 15V, f = 1MHz		159		pF
Reverse Transfer Capacitance	Crss	VGS = 0V, VDS = 15V, f = 1MHz		96		pF
Gate Resistance	Rg	VGS = 0V, VDS = 0V, f = 1MHz		2.2		Ω
Total Gate Charge	Qg	VDS = 15V , ID = 20A, VGS=10V		17.2		nC
Total Gate Charge	Qg	VDS = 15V , ID = 20A, VGS=4.5V		9.2		nC
Gate-Source Charge	Qgs	VDS = 15V , ID = 20A		1.9		nC
Gate-Drain Charge	Qgd	VDS = 15V , ID = 20A		5.2		nC
Turn-On Delay Time	td(on)	VDS = 15V ID & 20A, VGS = 10V, RGEN =6Ω		27		nS
Rise Time	tr	VDS = 15V ID & 20A, VGS = 10V, RGEN =6Ω		23		nS
Turn-Off Delay Time	td(off)	VDS = 15V ID & 20A, VGS = 10V, RGEN =6Ω		51		nS
Fall Time	tf	VDS = 15V ID & 20A, VGS = 10V, RGEN =6Ω		24		nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Current	IS				55	A
Forward Voltage	VSD	IF = 20A, VGS = 0V		1.2		V
Reverse Recovery Time	trr	IF = 20A, dlF/dt = 100A / µS		8.6		nS
Reverse Recovery Charge	Qrr	IF = 20A, dlF/dt = 100A / µS		1.7		nC