Field Stop IGBT 600 Volt 40 Amp onsemi FGH40N60SMD Ideal for PFC ESS Welders and Telecom Power Systems
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Product Description
Product Overview
The FGH40N60SMD is a 600 V, 40 A Field Stop IGBT from Fairchild Semiconductor, utilizing novel field stop IGBT technology. It offers optimized performance for applications requiring low conduction and switching losses, such as solar inverters, UPS, welders, PFC, telecom, and ESS. Key advantages include a maximum junction temperature of 175C, positive temperature coefficient for easy parallel operation, high current capability, low saturation voltage (1.9V Typ. at 40A), high input impedance, and fast switching (EOFF = 6.5 uJ/A). The device also features tight parameter distribution and is RoHS compliant.
Product Attributes
- Brand: Fairchild Semiconductor
- Product Name: FGH40N60SMD
- Technology: Field Stop IGBT
- Certifications: RoHS Compliant
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| VCES | Collector to Emitter Voltage | 600 | V | |||
| VGES | Gate to Emitter Voltage | ± 20 | V | |||
| IC | Collector Current @ TC = 25°C | 80 | A | |||
| IC | Collector Current @ TC = 100°C | 40 | A | |||
| ICM (1) | Pulsed Collector Current @ TC = 25°C | 120 | A | |||
| IF | Diode Forward Current @ TC = 25°C | 40 | A | |||
| IF | Diode Forward Current @ TC = 100°C | 20 | A | |||
| IFM (1) | Pulsed Diode Maximum Forward Current | 120 | A | |||
| PD | Maximum Power Dissipation @ TC = 25°C | 349 | W | |||
| PD | Maximum Power Dissipation @ TC = 100°C | 174 | W | |||
| TJ | Operating Junction Temperature | -55 | +175 | °C | ||
| Tstg | Storage Temperature Range | -55 | +175 | °C | ||
| TL | Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds | 300 | °C | |||
| Thermal Characteristics | ||||||
| RθJC(IGBT) | Thermal Resistance, Junction to Case | 0.43 | °C/W | |||
| RθJC(Diode) | Thermal Resistance, Junction to Case | 1.5 | °C/W | |||
| RθJA | Thermal Resistance, Junction to Ambient | 40 | °C/W | |||
| Off Characteristics | ||||||
| BVCES | Collector to Emitter Breakdown Voltage | VGE = 0V, IC = 250µA | 600 | V | ||
| ΔBVCES /ΔTJ | Temperature Coefficient of Breakdown Voltage | VGE = 0V, IC = 250µA | 0.6 | V/°C | ||
| ICES | Collector Cut-Off Current | VCE = VCES, VGE = 0V | 250 | µA | ||
| IGES | G-E Leakage Current | VGE = VGES, VCE = 0V | ±400 | nA | ||
| On Characteristics | ||||||
| VGE(th) | G-E Threshold Voltage | IC = 250µA, VCE = VGE | 3.5 | 4.5 | 6.0 | V |
| VCE(sat) | Collector to Emitter Saturation Voltage | IC = 40A, VGE = 15V | 1.9 | 2.5 | V | |
| VCE(sat) | Collector to Emitter Saturation Voltage | IC = 40A, VGE = 15V, TC = 175°C | 2.1 | V | ||
| Dynamic Characteristics | ||||||
| Cies | Input Capacitance | VCE = 30V, VGE = 0V, f = 1MHz | 1880 | pF | ||
| Coes | Output Capacitance | 180 | pF | |||
| Cres | Reverse Transfer Capacitance | 50 | pF | |||
| Switching Characteristics (TC = 25°C) | ||||||
| td(on) | Turn-On Delay Time | VCC = 400V, IC = 40A, RG = 6Ω, VGE = 15V, Inductive Load | 12 | 16 | ns | |
| tr | Rise Time | 20 | 28 | ns | ||
| td(off) | Turn-Off Delay Time | 92 | 120 | ns | ||
| tf | Fall Time | 13 | 17 | ns | ||
| Eon | Turn-On Switching Loss | 0.87 | 1.30 | mJ | ||
| Eoff | Turn-Off Switching Loss | 0.26 | 0.34 | mJ | ||
| Ets | Total Switching Loss | 1.13 | 1.64 | mJ | ||
| Switching Characteristics (TC = 175°C) | ||||||
| td(on) | Turn-On Delay Time | VCC = 400V, IC = 40A, RG = 6Ω, VGE = 15V, Inductive Load | 15 | ns | ||
| tr | Rise Time | 22 | ns | |||
| td(off) | Turn-Off Delay Time | 116 | ns | |||
| tf | Fall Time | 16 | ns | |||
| Eon | Turn-On Switching Loss | 0.97 | mJ | |||
| Eoff | Turn-Off Switching Loss | 0.60 | mJ | |||
| Ets | Total Switching Loss | 1.57 | mJ | |||
| Electrical Characteristics of the IGBT (Continued) | ||||||
| Qg | Total Gate Charge | VCE = 400V, IC = 40A, VGE = 15V | 119 | 180 | nC | |
| Qge | Gate to Emitter Charge | 13 | 20 | nC | ||
| Qgc | Gate to Collector Charge | 58 | 90 | nC | ||
| Electrical Characteristics of the Diode | ||||||
| VFM | Diode Forward Voltage | IF = 20A, TC = 25°C | 2.3 | 2.8 | V | |
| VFM | Diode Forward Voltage | IF = 20A, TC = 175°C | 1.67 | V | ||
| Erec | Reverse Recovery Energy | IF =20A, dIF/dt = 200A/µs, TC = 175°C | 48.9 | µJ | ||
| trr | Diode Reverse Recovery Time | TC = 25°C | 36 | ns | ||
| trr | Diode Reverse Recovery Time | TC = 175°C | 110 | ns | ||
| Qrr | Diode Reverse Recovery Charge | TC = 25°C | 46.8 | nC | ||
| Qrr | Diode Reverse Recovery Charge | TC = 175°C | 445 | nC | ||
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