Panjit 2N7002K R1 00501 60V N Channel MOSFET with Ultra Low On Resistance and Green Molding Compound
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Product Description
Product Overview
The 2N7002K is a 60V N-Channel Enhancement Mode MOSFET featuring ESD protection. It utilizes advanced trench process technology and a high-density cell design for ultra-low on-resistance. This MOSFET is specially designed for battery-operated systems and drivers for relays, displays, and memories, offering very low leakage current in the off condition and ESD protection up to 2KV HBM. It is lead-free and compliant with EU RoHS 2.0, with a green molding compound.
Product Attributes
- Brand: Panjit International Inc.
- Certifications: EU RoHS 2.0, IEC 61249 (Green molding compound)
- Material: Green molding compound
- ESD Protection: 2KV HBM
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | +20 | V | |||
| Continuous Drain Current | ID | Note 4 | 300 | mA | ||
| Pulsed Drain Current | IDM | Note 1 | 2000 | |||
| Power Dissipation | PD | TA=25oC | 500 | mW | ||
| Derate above 25oC | 4 | mW/ oC | ||||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | oC | ||
| Typical Thermal Resistance - Junction to Ambient | RJA | Note 3,4 | 250 | oC/W | ||
| Static Drain-Source Breakdown Voltage | BVDSS | VGS=0V,ID=10uA | 60 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 1 | - | 2.5 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS@10V, ID@500mA | ||||
| Drain-Source On-State Resistance | RDS(on) | VGS@4.5V, ID@200mA | ||||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | - | 1 | uA | |
| Gate-Source Leakage Current | IGSS | VGS=+20V,VDS=0V | - | +10 | ||
| Forward Transconductance | gfs | VDS=15V, ID=250mA | 100 | - | - | mS |
| Total Gate Charge | Qg | VDS=15V, ID=250mA, VGS=5V(Note 1,2) | 0.8 | - | nC | |
| Gate-Source Charge | Qgs | 0.35 | - | |||
| Gate-Drain Charge | Qg d | 0.2 | - | |||
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1MHZ | 35 | - | pF | |
| Output Capacitance | Coss | 13 | - | |||
| Reverse Transfer Capacitance | Crss | 8 | - | |||
| Turn-On Delay Time | td(on) | VDD=30V, ID=200mA, VGS=10V, RG=10(Note 1,2) | 2.7 | - | ns | |
| Turn-On Rise Time | tr | 19 | - | |||
| Turn-Off Delay Time | td(off) | 15 | - | |||
| Turn-Off Fall Time | tf | 23 | - | |||
| Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current | IS | --- | - | 300 | mA | |
| Diode Forward Voltage | VSD | IS=200mA, VGS=0V | 0.82 | 1.3 | V |
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