N channel Ignition IGBT onsemi FGD3245G2 F085 optimized for automotive ignition coil driver circuits
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Product Description
Product Overview
The FGB3245G2-F085 and FGD3245G2 are N-channel Ignition IGBTs from ON Semiconductor's EcoSPARK-2 technology, designed for automotive ignition coil driver circuits and coil-on-plug applications. This technology eliminates the need for external protection circuitry and is optimized for harsh automotive ignition environments, offering excellent Vsat and SCIS Energy capabilities even at elevated temperatures. They feature a logic-level gate drive with ESD protection and an integrated gate resistor, along with an integrated zener circuitry for 450V collector-to-emitter voltage clamping, enabling higher spark voltages.
Product Attributes
- Brand: ON Semiconductor
- Technology: EcoSPARK2
- Certifications: AEC Q101 Qualified, RoHS Compliant
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Units |
| Device Maximum Ratings | ||||||
| BVCER | Collector to Emitter Breakdown Voltage | (IC = 1mA) | 450 | V | ||
| BVECS | Emitter to Collector Voltage - Reverse Battery Condition | (IC = 10mA) | 28 | V | ||
| ESCIS25 | Self Clamping Inductive Switching Energy | (Note 1) | 320 | mJ | ||
| ESCIS150 | Self Clamping Inductive Switching Energy | (Note 2) | 180 | mJ | ||
| IC25 | Collector Current Continuous | VGE = 4.0V, TC = 25C | 23 | A | ||
| IC110 | Collector Current Continuous | VGE = 4.0V, TC = 110C | 23 | A | ||
| VGEM | Gate to Emitter Voltage Continuous | 10 | V | |||
| PD | Power Dissipation Total | TC = 25C | 150 | W | ||
| TJ | Operating Junction Temperature Range | -40 | +175 | C | ||
| TSTG | Storage Junction Temperature Range | -40 | +175 | C | ||
| Electrical Characteristics | ||||||
| BVCER | Collector to Emitter Breakdown Voltage | ICE = 2mA, VGE = 0, RGE = 1K, TJ = -40 to 150C | 420 | 480 | V | |
| BVCES | Collector to Emitter Breakdown Voltage | ICE = 10mA, VGE = 0V, RGE = 0, TJ = -40 to 150C | 440 | 500 | V | |
| BVECS | Emitter to Collector Breakdown Voltage | ICE = -75mA, VGE = 0V, TJ = 25C | 28 | V | ||
| BVGES | Gate to Emitter Breakdown Voltage | IGES = 2mA | 12 | V | ||
| ICER | Collector to Emitter Leakage Current | VCE = 250V, RGE = 1K, TJ = 25C | 25 | A | ||
| ICER | Collector to Emitter Leakage Current | VCE = 250V, RGE = 1K, TJ = 150C | 1 | mA | ||
| IECS | Emitter to Collector Leakage Current | VEC = 24V, TJ = 25C | 1 | mA | ||
| IECS | Emitter to Collector Leakage Current | VEC = 24V, TJ = 150C | 40 | |||
| R1 | Series Gate Resistance | 120 | ||||
| R2 | Gate to Emitter Resistance | 10K | 30K | |||
| VCE(SAT) | Collector to Emitter Saturation Voltage | ICE = 6A, VGE = 4V, TJ = 25C | 1.13 | 1.25 | V | |
| VCE(SAT) | Collector to Emitter Saturation Voltage | ICE = 10A, VGE = 4.5V, TJ = 150C | 1.32 | 1.50 | V | |
| VCE(SAT) | Collector to Emitter Saturation Voltage | ICE = 15A, VGE = 4.5V, TJ = 150C | 1.64 | 1.85 | V | |
| Dynamic Characteristics | ||||||
| QG(ON) | Gate Charge | ICE = 10A, VCE = 12V, VGE = 5V | 23 | nC | ||
| VGE(TH) | Gate to Emitter Threshold Voltage | ICE = 1mA, VCE = VGE, TJ = 25C | 1.3 | 1.6 | 2.2 | V |
| VGE(TH) | Gate to Emitter Threshold Voltage | ICE = 1mA, VCE = VGE, TJ = 150C | 0.75 | 1.1 | 1.8 | V |
| VGEP | Gate to Emitter Plateau Voltage | VCE = 12V, ICE = 10A | 2.7 | V | ||
| td(ON)R | Current Turn-On Delay Time-Resistive | VCE = 14V, RL = 1, VGE = 5V, RG = 1K, TJ = 25C | 0.9 | 4 | s | |
| trR | Current Rise Time-Resistive | 2.6 | 7 | s | ||
| td(OFF)L | Current Turn-Off Delay Time-Inductive | VCE = 300V, L = 1mH, VGE = 5V, RG = 1K, ICE = 6.5A, TJ = 25C | 5.4 | 15 | s | |
| tfL | Current Fall Time-Inductive | 2.7 | 15 | s | ||
| ESCIS | Self Clamped Inductive Switching | L = 3.0 mHy,RG = 1K, VGE = 5V, (Note 1), TJ = 25C | 320 | mJ | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance Junction to Case | All packages | 0.9 | C/W | ||
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