100V N Channel MOSFET PANJIT BSS123 R1 00001 designed for PWM applications and low RDS ON resistance
Price:
Negotiable
MOQ:
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Delivery Time:
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Product Description
Product Overview
The PBSS123 is a 100V N-Channel Enhancement Mode MOSFET featuring ESD protection. It is manufactured using an advanced Trench Process Technology and is specially designed for switch load and PWM applications. This device offers low RDS(ON) at various gate-source voltages and drain currents, and is lead-free in compliance with EU RoHS 2.0, with a green molding compound.
Product Attributes
- Brand: Panjit International Inc.
- Certifications: EU RoHS 2.0 compliant, Green molding compound as per IEC 61249 standard, ESD Protected 2KV HBM
- Material: Halogen free
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 100 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 1 | 1.7 | 2.5 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=10V, ID=170mA | - | 4 | 6 | |
| Drain-Source On-State Resistance | RDS(on) | VGS=4.5V, ID=130mA | - | 4.5 | 10 | |
| Zero Gate Voltage Drain Current | IDSS | VDS=80V, VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=+20V, VDS=0V | - | - | +10 | uA |
| Total Gate Charge | Qg | VDS=30V, ID=170mA, VGS=10V (Note 1,2) | - | 1.8 | - | nC |
| Gate-Source Charge | Qgs | - | 0.4 | - | ||
| Gate-Drain Charge | Qg | - | 0.3 | - | ||
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHZ | - | 45 | - | pF |
| Output Capacitance | Coss | - | 14 | - | ||
| Reverse Transfer Capacitance | Crss | - | 7.8 | - | ||
| Turn-On Delay Time | td(on) | VDD=30V, ID=170mA, VGS=10V, RG=6 (Note 1,2) | - | 3.4 | - | ns |
| Turn-On Rise Time | tr | - | 19 | - | ||
| Turn-Off Delay Time | td(off) | - | 8.2 | - | ||
| Turn-Off Fall Time | tf | - | 20 | - | ||
| Drain-Source Diode Forward Current | IS | - | - | 170 | mA | |
| Diode Forward Voltage | VSD | IS=170mA, VGS=0V | - | 0.9 | 1.3 | V |
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