PANJIT PJ2301 R1 000A2 P Channel MOSFET 20V Drain Source Breakdown Voltage and RoHS Compliant Device

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Product Description

20V P-Channel Enhancement Mode MOSFET

This P-Channel Enhancement Mode MOSFET is designed for switch load and PWM applications. It features advanced trench process technology and offers low RDS(ON) at various gate-source voltages. The device is lead-free and compliant with EU RoHS 2011/65/EU directive, utilizing a green molding compound as per IEC61249 Std. (Halogen Free).

Product Attributes

Brand: Panjit International Inc.
Package: SOT-23
Certifications: EU RoHS 2011/65/EU, IEC61249 Std. (Halogen Free)
Origin: Not Specified
Material: Not Specified
Color: Not Specified

Technical Specifications

Parameter	Symbol	Test Condition	Min.	Typ.	Max.	Units
Drain-Source Breakdown Voltage	BVDSS	VGS=0V, ID=-250uA	-20	-	-	V
Gate Threshold Voltage	VGS(th)	VDS=VGS, ID=-250uA	-0.4	-0.71	-1.2	V
Drain-Source On-State Resistance	RDS(on)	VGS=-4.5V, ID=-3.1A	-	84	100	m
		VGS=-2.5V, ID=-2.0A	-	104	135	V
		VGS=-1.8V, ID=-1.1A	-	134	190	V
Zero Gate Voltage Drain Current	IDSS	VDS=-20V, VGS=0V	-	-0.01	-1	uA
Gate-Source Leakage Current	IGSS	VGS=+12V, VDS=0V	-	+10	+100	nA
Total Gate Charge	Qg	VDS=-10V, ID=-3.1A, VGS=-4.5V (Note 1,2)	-	5.4	-	nC
Gate-Source Charge	Qgs		-	0.7	-
Gate-Drain Charge	Qg d		-	1.3	-
Input Capacitance	Ciss	VDS=-10V, VGS=0V, f=1.0MHZ	-	416	-	pF
Output Capacitance	Coss		-	43	-
Reverse Transfer Capacitance	Crss		-	32	-
Switching Characteristics	td(on)	VDD=-10V, ID=-3.1A, VGS=-4.5V, RG=6 (Note 1,2)	-	4	-	ns
	tr		-	27	-
	td(off)		-	78	-
	tf		-	45	-
Drain-Source Diode Forward Current	IS		-	-	-1.5	A
Diode Forward Voltage	VSD	IS=-1.0A, VGS=0V	-	0.8	-1.2	V