750 V Silicon Carbide SiC FET onsemi UJ4SC075011K4S with standard gate drive and low reverse recovery
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Product Description
Product Description
The UJ4SC075011K4S is a 750 V, 11 m SiC FET designed with a unique cascode configuration, co-packaging a normally-on SiC JFET with a Si MOSFET to create a normally-off SiC FET device. Its standard gate-drive characteristics enable it to serve as a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. Available in the TO-247-4L package, this device features ultra-low gate charge and exceptional reverse recovery, making it ideal for switching inductive loads and applications requiring standard gate drive.
Typical Applications: EV Charging, PV Inverters, Switch Mode Power Supplies, Power Factor Correction Modules, Motor Drives, Induction Heating.
Product Attributes
- Brand: onsemi
- Material: Silicon Carbide (SiC)
- Certifications: Pb-Free, Halogen Free, RoHS Compliant
- Package: TO-247-4L
Technical Specifications
| Parameter | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage (BVDS) | VGS = 0 V, ID = 1 mA | 750 | - | - | V |
| Total Drain Leakage Current (IDSS) | VDS = 750 V, VGS = 0 V, TJ = 25 C | - | 3.5 | 60 | A |
| Total Drain Leakage Current (IDSS) | VDS = 750 V, VGS = 0 V, TJ = 175C | - | 45 | - | A |
| Total Gate Leakage Current (IGSS) | VDS = 0 V , TJ = 25 C, VGS = 20 V / + 20 V | - | 20 | - | nA |
| Drain-Source On-resistance (RDS(on)) | VGS = 12 V, ID = 60 A, TJ = 25 C | - | 11 | 14.2 | m |
| Drain-Source On-resistance (RDS(on)) | VGS = 12 V, ID = 60 A, TJ = 125 C | - | 18.4 | - | m |
| Drain-Source On-resistance (RDS(on)) | VGS = 12 V, ID = 60 A, TJ = 175 C | - | 24.2 | - | m |
| Gate Threshold Voltage (VG(th)) | VDS = 5 V, ID = 10 mA | 3.5 | 4.5 | 5.5 | V |
| Gate Resistance (RG) | f = 1 MHz, open drain | - | 2.3 | - | |
| Diode Continuous Forward Current (IS) | TC = 25 C | - | - | 104 | A |
| Diode Pulse Current (IS,pulse) | TC = 25 C | - | - | 300 | A |
| Forward Voltage (VFSD) | VGS = 0 V, IS = 30 A, TJ = 25 C | - | 1.1 | 1.24 | V |
| Forward Voltage (VFSD) | VGS = 0 V, IS = 30 A, TJ = 175 C | - | 1.2 | - | V |
| Reverse Recovery Charge (Qrr) | VDS = 400 V, IS = 60 A, VGS = 0 V, RG_EXT = 5 , di/dt = 2500 A/s, TJ = 25 C | - | 288 | - | nC |
| Reverse Recovery Charge (Qrr) | VDS = 400 V, IS = 60 A, VGS = 0 V, RG_EXT = 5 , di/dt = 2500 A/s, TJ = 150 C | - | 292 | - | nC |
| Reverse Recovery Time (trr) | VDS = 400 V, IS = 60 A, VGS = 0 V, RG_EXT = 5 , di/dt = 2500 A/s, TJ = 25 C | - | 26 | - | ns |
| Reverse Recovery Time (trr) | VDS = 400 V, IS = 60 A, VGS = 0 V, RG_EXT = 5 , di/dt = 2500 A/s, TJ = 150 C | - | 26 | - | ns |
| Input Capacitance (Ciss) | VDS = 400 V, VGS = 0 V, f = 100 kHz | - | 3245 | - | pF |
| Output Capacitance (Coss) | VDS = 400 V, VGS = 0 V, f = 100 kHz | - | 178 | - | pF |
| Reverse Transfer Capacitance (Crss) | VDS = 400 V, VGS = 0 V, f = 100 kHz | - | 1.2 | - | pF |
| Effective Output Capacitance, Energy Related (Coss(er)) | VDS = 0 V to 400 V, VGS = 0 V | - | 225 | - | pF |
| Effective Output Capacitance, Time Related (Coss(tr)) | VDS = 0 V to 400 V, VGS = 0 V | - | 470 | - | pF |
| Stored Energy in COSS (Eoss) | VDS = 400 V, VGS = 0 V | - | 18 | - | J |
| Total Gate Charge (QG) | VDS = 400 V, ID = 60 A, VGS = 0 V to 15 V | - | 75 | - | nC |
| Gate-Drain Charge (QGD) | VDS = 400 V, ID = 60 A, VGS = 0 V to 15 V | - | 13 | - | nC |
| Gate-Source Charge (QGS) | VDS = 400 V, ID = 60 A, VGS = 0 V to 15 V | - | 22 | - | nC |
| Turn-on Delay Time (td(on)) | VDS = 400 V, ID = 60 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 25 C | - | 19 | - | ns |
| Rise Time (tr) | VDS = 400 V, ID = 60 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 25 C | - | 26 | - | ns |
| Turn-off Delay Time (td(off)) | VDS = 400 V, ID = 60 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 25 C | - | 65 | - | ns |
| Fall Time (tf) | VDS = 400 V, ID = 60 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 25 C | - | 9 | - | ns |
| Turn-on Energy (EON) | VDS = 400 V, ID = 60 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 25 C | - | 257 | - | J |
| Turn-off Energy (EOFF) | VDS = 400 V, ID = 60 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 25 C | - | 107 | - | J |
| Total Switching Energy (ETOTAL) | VDS = 400 V, ID = 60 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 25 C | - | 364 | - | J |
| Turn-on Delay Time (td(on)) | VDS = 400 V, ID = 60 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 150 C | - | 19 | - | ns |
| Rise Time (tr) | VDS = 400 V, ID = 60 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 150 C | - | 28 | - | ns |
| Turn-off Delay Time (td(off)) | VDS = 400 V, ID = 60 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 150 C | - | 73 | - | ns |
| Fall Time (tf) | VDS = 400 V, ID = 60 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 150 C | - | 9 | - | ns |
| Turn-on Energy (EON) | VDS = 400 V, ID = 60 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 150 C | - | 320 | - | J |
| Turn-off Energy (EOFF) | VDS = 400 V, ID = 60 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 150 C | - | 125 | - | J |
| Total Switching Energy (ETOTAL) | VDS = 400 V, ID = 60 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 150 C | - | 445 | - | J |
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