PANJIT PJA3405 R1 00001 P Channel Enhancement Mode MOSFET 30V Low RDS ON Suitable for Load Switching
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The PPJA3405 is a 30V P-Channel Enhancement Mode MOSFET designed for switch load and PWM applications. It features advanced trench process technology, offering low RDS(ON) values. This product is lead-free and compliant with EU RoHS 2011/65/EU directive, utilizing a green molding compound as per IEC61249 Std. (Halogen Free).
Product Attributes
- Brand: Panjit International Inc.
- Certifications: EU RoHS 2011/65/EU, IEC61249 Std. (Halogen Free)
- Package: SOT-23
- Marking: A05
Technical Specifications
| Parameter | Symbol | Test Condition | Limit | Units |
| Drain-Source Voltage | VDS | -30 | V | |
| Gate-Source Voltage | VGS | +20 | V | |
| Continuous Drain Current | ID | -3.6 | A | |
| Pulsed Drain Current | IDM | -14.4 | A | |
| Power Dissipation | PD | Ta=25oC | 1.25 | W |
| Derate above 25oC | 10 | mW/ oC | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55~150 | oC | |
| Typical Thermal resistance - Junction to Ambient | RJA | (Note 3) | 100 | oC/W |
| Static Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250uA | -1.0 -1.37 -2.1 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=-10V, ID=-3.6A | - 59 73 | m |
| Drain-Source On-State Resistance | RDS(on) | VGS=-4.5V, ID=-2.4A | - 76 97 | m |
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V | - -0.01 -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=+20V, VDS=0V | - +10 +100 | nA |
| Total Gate Charge | Qg | VDS=-15V, ID=-3.6A, VGS=-10V (Note 1,2) | - 10 | nC |
| Gate-Source Charge | Qgs | - 1.1 | ||
| Gate-Drain Charge | Qg d | - 1.7 | ||
| Input Capacitance | Ciss | VDS=-15V, VGS=0V, f=1.0MHZ | - 417 | pF |
| Output Capacitance | Coss | - 50 | ||
| Reverse Transfer Capacitance | Crss | - 36 | ||
| Switching Turn-On Delay Time | td(on) | VDD=-15V, ID=-3.6A, VGS=-10V, RG=6 (Note 1,2) | - 3.2 | ns |
| Turn-On Rise Time | tr | - 33 | ||
| Turn-Off Delay Time | td(off) | - 119 | ||
| Turn-Off Fall Time | tf | - 68 | ||
| Drain-Source Diode Forward Current | IS | - -1.5 | A | |
| Diode Forward Voltage | VSD | IS=-1.0A, VGS=0V | - -0.77 -1.2 | V |
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