Schottky Diode PIELENST 1N5819W-L with 400 Milliwatt Power Dissipation and Low Reverse Current Rating
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The 1N5819W-L is a Schottky Barrier Diode designed for various electronic applications. It offers efficient rectification with low forward voltage drop and fast switching characteristics.
Product Attributes
- Brand: SZPIELENST.COM
- Package: SOD123
Technical Specifications
| Model | Parameter | Symbol | Test Conditions | Value | Unit |
| 1N5819W-L | Peak Repetitive Reverse Voltage | VRRM | 40 | V | |
| Working Peak Reverse Voltage | VRWM | 30 | V | ||
| RMS Reverse Voltage | VR(RMS) | 28 | V | ||
| Forward Continuous Current | IFM | 350 | mA | ||
| Non-repetitive Peak Forward Surge Current | IFSM | @t= 8.3ms | 2 | A | |
| Power Dissipation | PD | 400 | mW | ||
| Thermal Resistance Junction to Ambient | RJA | 250 | /W | ||
| Junction Temperature | Tj | 125 | |||
| Storage Temperature | Tstg | -55~+150 | |||
| Reverse Voltage | V(BR) | IR=100A | 40 | V | |
| Reverse Current | IR | VR=30V | 5 | A | |
| Forward Voltage | VF | IF=200mA | 0.6 | V |
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina