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power management PIELENST AO4407-L P Channel MOSFET with rugged design and low RDS on characteristics

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The AO4407-L is a P-Channel enhancement MOS Field Effect Transistor designed for various power management applications. It features low RDS(on) due to its high-density cell design, fast switching capabilities, and a reliable, rugged construction. This transistor is avalanche rated and offers low leakage current, making it suitable for PWM applications, load switching, power management in portable/desktop PCs, and DC/DC conversion.

Product Attributes

  • Material: Halogen free

Technical Specifications

ParameterSymbolTest ConditionsMin.Typ.Max.Unit
Drain-Source Breakdown VoltageBVDSSVGS=0V, ID=-250uA-30V
Zero Gate Voltage Drain CurrentIDSSVGS=0V, VDS=-30V-1uA
Gate-to-source Leakage CurrentIGSSVGS=25V, VDS=0V100nA
Gate Threshold VoltageVGS(TH)VGS=VDS, ID=-250uA-1.0-1.5-2.0V
Drain-to-source On-resistanceRDS(on)VGS=-10V, ID=-10A13.521m
VGS=-4.5V, ID=-7A18.527
Input CapacitanceCISSVGS=0V VDS =-15V f=1MHz1230pF
Output CapacitanceCOSS160pF
Reverse Transfer CapacitanceCRSS145pF
Gate ResistanceRgf=1MHZ10
Total Gate ChargeQG(TOT)VGS=-10V VDS=-15V ID =-10A26.4nC
Gate-to-Source ChargeQGS6nC
Gate-to-Drain ChargeQGD4.3nC
Turn-On Delay Timetd(ON)VGS=-10V VDS=-15V RL=1 RG=318ns
Rise Timetr22ns
Turn-Off Delay Timetd(OFF)55ns
Fall Timetf42ns
Forward VoltageVSDVGS=0V, ISD=-1.0A-0.75-1V
Reverse Recovery TimetrrVGS=0V, ISD=-10A, di/dt=100A/us32ns
Reverse Recovery ChargeQrr28nC

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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