low forward voltage diode onsemi MBR130T1G suitable for compact systems requiring stress protection

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Product Description

Product Overview

The MBR130T1/D is a Schottky Power Rectifier designed for surface mount applications. It utilizes the Schottky Barrier principle for low voltage, high frequency rectification, and as free-wheeling or polarity protection diodes. Its compact size and weight make it ideal for systems where these factors are critical. The device offers an easy-to-use alternative to leadless package styles and features a guardring for stress protection and a low forward voltage.

Product Attributes

Brand: Semiconductor Components Industries, LLC (ON Semiconductor)
Package: SOD-123
Certifications: AEC-Q101 Qualified (for NRVB prefix)
Material: Epoxy, Molded
Marking: S3
Pb-Free: Yes

Technical Specifications

Rating	Symbol	Value	Unit	Conditions
Peak Repetitive Reverse Voltage	VRRM	30	V
Working Peak Reverse Voltage	VRWM	30	V
DC Blocking Voltage	VR	30	V
Average Rectified Forward Current	IF(AV)	1.0	A	TL = 65C
Non-Repetitive Peak Surge Current	IFSM	5.5	A	Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz
Storage Temperature Range	Tstg	-65 to +125	C
Operating Junction Temperature	TJ	-65 to +125	C
Voltage Rate of Change	dv/dt	1000	V/s	Rated VR
Thermal Resistance, Junction to Ambient	RJA	230	C/W	Note 1
Thermal Resistance, Junction to Lead	RJL	108	C/W	Note 1
Instantaneous Forward Voltage	VF	0.47	V	IF = 0.1 A, TJ = 25C
Instantaneous Forward Voltage	VF	0.35	V	IF = 0.7 A, TJ = 25C
Instantaneous Forward Voltage	VF	0.45	V	IF = 1.0 A, TJ = 25C
Maximum Instantaneous Reverse Current	IR	60	A	Rated DC Voltage, TC = 25C
Maximum Instantaneous Reverse Current	IR	10	A	VR = 5 V, TC = 25C