Electronic P Channel MOSFET PIELENST SI2323DS-T1-GE3-L with Low RDS ON and Moisture Sensitivity Level 1
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Product Description
Product Overview
The SI2323DS-T1-GE3-L is a P Channel MOSFET designed for various electronic applications. It features low RDS(ON), meets UL 94 V-0 flammability rating, and has a Moisture Sensitivity Level 1. This device is also Lead Free Finish/RoHS Compliant.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: UL 94 V-0 Flammability Rating, RoHS Compliant
- Halogen Free: Available Upon Request By Adding Suffix "-HF"
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | 10 | V | |||
| Drain Current-Continuous | ID | (Tamb=25C) | -4.2 | A | ||
| Drain Current-Pulse | IDM | (Note 2) | -21 | A | ||
| Power Dissipation | PD | (Tamb=25C) | 1.4 | W | ||
| Operating Junction Temperature Range | -55 | +150 | C | |||
| Storage Temperature | -55 | +150 | C | |||
| Thermal Resistance | RthJA | Junction to Ambient (Note 1) | 90 | C/W | ||
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=-250A | -20 | V | ||
| Gate-Threshold Voltage | VGS(th) | VDS=VGS, ID=-250A | -0.5 | -0.9 | V | |
| Gate-Body Leakage Current | IGSS | VGS =10V, VDS=0V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =-20V, VGS=0V | -1 | A | ||
| Drain-Source On-Resistance | RDS(on) | VGS=-4.5V, ID=-2.7A (Note 3) | 35 | 60 | m | |
| VGS=-2.5V, ID=-2.7A (Note 3) | 46 | 80 | m | |||
| VGS=-1.8V, ID=-2.7A (Note 3) | 90 | m | ||||
| Forward Tranconductance | gFS | VDS=-5V, ID=-4.1A (Note 3) | 6 | S | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-4V,VGS=-4.5V,ID=-4.1A (Note 1,4) | 740 | pF | ||
| Output Capacitance | Coss | f=1MHz (Note 1,4) | 290 | pF | ||
| Reverse Transfer Capacitance | Crss | f=1MHz (Note 1,4) | 190 | pF | ||
| Total Gate Charge | Qg | VDS=-4V,VGS=-2.5V,ID=-4.1A (Note 1) | 1.2 | 1.6 | nC | |
| Gate-Source Chage | Qgs | (Note 1) | 7 | 14 | nC | |
| Gage-Drain Charge | Qgd | (Note 1) | 1.4 | nC | ||
| Gate Resistance | Rg | (Note 1,4) | 4.5 | 9 | ||
| Turn-On Delay Time | td(on) | VDD=-4V,VGEN=-4.5V,RL=1.2, ID=-3.3A,RG=1 (Note 1,4) | 13 | 20 | ns | |
| Turn-On Rise Time | tr | (Note 1,4) | 35 | 53 | ns | |
| Turn-Off Delay Time | td(off) | (Note 1,4) | 32 | 48 | ns | |
| Turn-Off Fall Time | tf | (Note 1,4) | 10 | 20 | ns | |
| td(on) | VDD=-4V,VGEN=-8V,RL=1.2, ID=-3.3A,RG=1 (Note 1,4) | 5 | 10 | ns | ||
| tr | (Note 1,4) | 11 | 17 | ns | ||
| td(off) | (Note 1,4) | 22 | 33 | ns | ||
| tf | (Note 1,4) | 16 | 24 | ns | ||
| Drain-Source Body Diode Characteristics | ||||||
| Continuous Source-Drain Diode Current | IS | TC=25C | -4.2 | A | ||
| Pulse Diode Forward Current | ISM | (Note 3) | -10 | A | ||
| Body Diode Voltage | VSD | IF=-3.3A (Note 3) | -0.8 | -1.2 | V | |
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