Electric vehicle inverter module onsemi NFVA35065L32 with AEC AQG324 and RoHS compliant certifications
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The NFVA35065L32 is an advanced Automotive SPM module designed for hybrid and electric vehicle applications. It provides a high-performance inverter output stage with integrated IGBTs, optimized gate drive for reduced EMI and losses, and multiple on-module protection features including under-voltage lockout, over-current shutdown, and thermal monitoring. The module utilizes a single supply voltage for its high-speed HVIC, translating logic-level gate inputs to high-voltage drive signals for the internal IGBTs. Separate negative IGBT terminals are available for flexible control algorithm implementation.
Product Attributes
- Brand: onsemi
- Series: ASPM 27 Series
- Package: 27 Pin DIP Package (ASPM27-CCA)
- Certifications: AEC & AQG324 Qualified, PPAP Capable, UI1557 Certified (File No. E209204), UL94V-0 Compliant, PbFree and RoHS Compliant
- Material: AlN DBC Substrate
- Application: Automotive High Voltage Auxiliary Motors (Climate eCompressors, Oil/Water Pumps, Super/Turbo Chargers, Variety Fans)
Technical Specifications
| Parameter | Conditions | Rating | Unit |
| INVERTER PART | |||
| Supply Voltage (VPN) | Applied between PNU, NV, NW | 500 | V |
| Supply Voltage (Surge) (VPN(Surge)) | Applied between PNU, NV, NW | 550 | V |
| CollectorEmitter Voltage (VCES) | 650 | V | |
| Collector Current (IC) | TC = 100C, VDD 15 V, TJ 175C | 50 | A |
| Collector Current (Peak) (ICP) | TC = 25C, TJ 175C, Under 1 ms Pulse Width | 100 | A |
| Collector Dissipation (PC) | TC = 25C per One Chip | 428 | W |
| Operating Junction Temperature (TJ) | IGBT and Diode | 40175 | C |
| Operating Junction Temperature (TJ) | Driver IC | 40150 | C |
| Short Circuit Withstand Time (tSC) | VDD = VBS 16.5 V, VPN 400 V, TJ = 150C Nonrepetitive | 3 | s |
| Isolation Voltage (VISO) | 60 Hz, Sinusoidal, AC 1 minute, Connection Pins to Heat Sink Plate | 2500 | Vrms |
| Junction to Case Thermal Resistance (Rth(j-c)Q) | Inverter IGBT part (per 1/6 module) | 0.35 | C/W |
| Junction to Case Thermal Resistance (Rth(j-c)F) | Inverter FWD part (per 1/6 module) | 0.90 | C/W |
| Package Stray Inductance (L) | P to NU, NV, NW | 24 | nH |
| CONTROL PART | |||
| Control Supply Voltage (VDD) | Applied between VDD(H), VDD(L)COM | 20 | V |
| HighSide Control Bias Voltage (VBS) | Applied between VB(U)VS(U), VB(V)VS(V), VB(W)VS(W) | 20 | V |
| Input Signal Voltage (VIN) | Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL), IN(WL)COM | 0.3VDD+0.3 | V |
| Fault Output Supply Voltage (VFO) | Applied between VFOCOM | 0.3VDD+0.3 | V |
| Fault Output Current (IFO) | Sink Current at VFO pin | 2 | mA |
| Current Sensing Input Voltage (VSC) | Applied between CSCCOM | 0.3VDD+0.3 | V |
| ELECTRICAL CHARACTERISTICS - INVERTER PART | |||
| Collector Emitter Saturation Voltage (VCE(SAT)) | VDD = VBS = 15 V, VIN = 5 V, IC = 50 A, TJ = 25C | 1.75 - 2.25 | V |
| Collector Emitter Saturation Voltage (VCE(SAT)) | VDD = VBS = 15 V, VIN = 5 V, IC = 50 A, TJ = 175C | 2.15 - 2.75 | V |
| FWD Forward Voltage (VF) | VIN = 0 V, IF = 50 A, TJ = 25C | 1.90 - 2.50 | V |
| FWD Forward Voltage (VF) | VIN = 0 V, IF = 50 A, TJ = 175C | 1.85 - 2.45 | V |
| High Side Switching Times (tON) | VPN = 300 V, VDD = 15 V, IC = 50 A, TJ = 25C, Inductive Load | 0.80 - 1.80 | s |
| High Side Switching Times (tOFF) | VPN = 300 V, VDD = 15 V, IC = 50 A, TJ = 25C, Inductive Load | 1.25 - 1.75 | s |
| Low Side Switching Times (tON) | VPN = 300 V, VDD = 15 V, IC = 50 A, TJ = 25C, Inductive Load | 0.65 - 1.65 | s |
| Low Side Switching Times (tOFF) | VPN = 300 V, VDD = 15 V, IC = 50 A, TJ = 25C, Inductive Load | 1.30 - 1.80 | s |
| CollectorEmitter Leakage Current (ICES) | TJ = 25C, VCE = VCES | 3 | mA |
| ELECTRICAL CHARACTERISTICS - CONTROL PART | |||
| Quiescent VDD Supply Current (IQDDH) | VDD(H) = 15 V, IN(UH,VH.WH) = 0 V | 0.40 | mA |
| Quiescent VDD Supply Current (IQDDL) | VDD(L) = 15 V, IN(UL,VL,WL) = 0 V | 4.80 | mA |
| Operating VDD Supply Current (IPDDH) | VDD(H) = 15 V, fPWM = 20 kHz, duty = 50%, applied to one PWM signal input for HighSide | 0.48 | mA |
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