sensitive gate silicon controlled rectifier onsemi C106D1G designed for consumer electronic devices
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The C106 Series Sensitive Gate Silicon Controlled Rectifiers are glassivated PNPN devices designed for high-volume consumer applications. They are suitable for temperature, light, and speed control, process and remote control, and warning systems where reliable operation is crucial. Key features include glassivated surface for reliability, economical pricing, practical triggering and holding characteristics, and a flat, rugged Thermopad construction for low thermal resistance and high heat dissipation. These devices are PbFree and offer sensitive gate triggering.
Product Attributes
- Brand: Semiconductor Components Industries, LLC (onsemi)
- Certifications: PbFree Devices
Technical Specifications
| Characteristic | Symbol | C106B | C106D, C106D1* | C106M, C106M1* | Unit | Notes | |
| Peak Repetitive OffState Voltage | VDRM, VRRM | 200 | 400 | 600 | V | Sine Wave, 5060 Hz, RGK = 1 k, TC = 40 to 110C | |
| OnState RMS Current | IT(RMS) | 4.0 | A | 180 Conduction Angles, TC = 80C | |||
| Average OnState Current | IT(AV) | 2.55 | A | 180 Conduction Angles, TC = 80C | |||
| Peak NonRepetitive Surge Current | ITSM | 20 | A | 1/2 Cycle, Sine Wave, 60 Hz, TJ = +25C | |||
| Circuit Fusing Considerations | I2t | 1.65 | As | t = 8.3 ms | |||
| Forward Peak Gate Power | PGM | 0.5 | W | Pulse Width 1.0 s, TC = 80C | |||
| Forward Average Gate Power | PG(AV) | 0.1 | W | Pulse Width 1.0 s, TC = 80C | |||
| Forward Peak Gate Current | IGM | 0.2 | A | Pulse Width 1.0 s, TC = 80C | |||
| Operating Junction Temperature Range | TJ | 40 to +110 | C | ||||
| Storage Temperature Range | Tstg | 40 to +150 | C | ||||
| Mounting Torque | 6.0 | in. lb. | Note 2 | ||||
| Thermal Resistance, JunctiontoCase | RJC | 3.0 | C/W | ||||
| Thermal Resistance, JunctiontoAmbient | RJA | 75 | C/W | ||||
| Maximum Lead Temperature for Soldering Purposes | TL | 260 | C | 1/8 in. from Case for 10 Seconds | |||
| Peak Repetitive Forward or Reverse Blocking Current | IDRM, IRRM | 10 / 100 | A / mA | TJ = 25C / 110C, VAK = Rated VDRM or VRRM, RGK = 1 k | |||
| Peak Forward OnState Voltage | VTM | 2.2 | V | ITM = 4 A, Note 3 | |||
| Gate Trigger Current (Continuous dc) | IGT | 15 / 200 | 35 / 500 | A | TJ = 25C / 40C, VAK = 6 Vdc, RL = 100 , Note 4 | ||
| Peak Reverse Gate Voltage | VGRM | 6.0 | V | IGR = 10 A | |||
| Gate Trigger Voltage (Continuous dc) | VGT | 0.4 / 0.60 / 0.8 | 0.5 / 0.75 / 1.0 | V | TJ = 25C / 40C, VAK = 6 Vdc, RL = 100 , Note 4 | ||
| Gate NonTrigger Voltage | VGD | 0.2 | V | VAK = 12 V, RL = 100 , TJ = 110C, Note 4 | |||
| Latching Current | IL | 0.20 / 5.0 | 0.35 / 7.0 | mA | TJ = 25C / 40C, VAK = 12 V, IG = 20 mA, RGK = 1 k, Note 4 | ||
| Holding Current | IH | 0.19 / 3.0 | 0.33 / 6.0 | 0.07 / 2.0 | mA | TJ = 25C / 40C / +110C, VD = 12 Vdc, RGK = 1 k, Note 4 | |
| Critical RateofRise of OffState Voltage | dv/dt | 8.0 | V/s | VAK = Rated VDRM, Exponential Waveform, RGK = 1 k, TJ = 110C | |||
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