N Channel MOSFET ORIENTAL SEMI OSG65R290DEF Featuring Charge Balance Technology and Low Conduction Loss
Product Overview
The OSG65R290DEF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor's GreenMOS high voltage series. Utilizing charge balance technology, it delivers outstanding low on-resistance and reduced gate charge, minimizing conduction loss and enhancing switching performance. The E series is specifically optimized for balanced switching characteristics, achieving a compromise between EMI and efficiency. This MOSFET is designed to enable power supply systems to reach high efficiency levels while adhering to EMI standards. Key applications include LED lighting, chargers, adapters, TV power, telecom power, server power, and solar/UPS systems.
Product Attributes
- Brand: Oriental Semiconductor
- Product Line: GreenMOS
- Technology: Charge Balance Technology
- Mode: Enhancement Mode
- Channel Type: N-Channel
- RoHS Compliant: Yes
- Halogen Free: Yes
- Pb Free: Yes
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 650 | V | VGS=0 V, ID=250 A |
| Drain-source breakdown voltage (Tj=150C) | BVDSS | 700 | V | VGS=0 V, ID=250 A, Tj=150 C |
| Gate threshold voltage | VGS(th) | 2.7 - 3.7 | V | VDS=VGS, ID=250 A |
| Drain-source on-state resistance | RDS(ON) | 0.25 - 0.29 | VGS=10 V, ID=7.5 A | |
| Drain-source on-state resistance (Tj=150C) | RDS(ON) | 0.68 | VGS=10 V, ID=7.5 A, Tj=150 C | |
| Gate-source leakage current | IGSS | -100 - 100 | nA | VGS=30 V |
| Drain-source leakage current | IDSS | 1 | A | VDS=650 V, VGS=0 V |
| Continuous drain current | ID | 15 | A | TC=25 C |
| Continuous drain current | ID | 9.5 | A | TC=100 C |
| Pulsed drain current | ID, pulse | 45 | A | TC=25 C |
| Continuous diode forward current | IS | 15 | A | TC=25 C |
| Diode pulsed current | IS, pulse | 45 | A | TC=25 C |
| Power dissipation | PD | 104 | W | TC=25 C |
| Single pulsed avalanche energy | EAS | 250 | mJ | VDD=100 V, VGS=10 V, L=10 mH, starting Tj=25 C |
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | VDS=0480 V |
| Reverse diode dv/dt | dv/dt | 15 | V/ns | VDS=0480 V, ISDID |
| Operation and storage temperature | Tstg, Tj | -55 to 150 | C | - |
| Thermal resistance, junction-case | RJC | 1.2 | C/W | - |
| Thermal resistance, junction-ambient | RJA | 62 | C/W | Device mounted on 1 in 2 FR-4 board with 2oz. Copper, still air, Ta=25 C |
| Input capacitance | Ciss | 1079 | pF | VGS=0 V, VDS=50 V, =100 kHz |
| Output capacitance | Coss | 74.1 | pF | VGS=0 V, VDS=50 V, =100 kHz |
| Reverse transfer capacitance | Crss | 2.1 | pF | VGS=0 V, VDS=50 V, =100 kHz |
| Turn-on delay time | td(on) | 30.1 | ns | VGS=10 V, VDS=400 V, RG=2 , ID=8 A |
| Rise time | tr | 19.5 | ns | VGS=10 V, VDS=400 V, RG=2 , ID=8 A |
| Turn-off delay time | td(off) | 61.5 | ns | VGS=10 V, VDS=400 V, RG=2 , ID=8 A |
| Fall time | tf | 15.5 | ns | VGS=10 V, VDS=400 V, RG=2 , ID=8 A |
| Total gate charge | Qg | 21.0 | nC | VGS=10 V, VDS=400 V, ID=8 A |
| Gate-source charge | Qgs | 5.0 | nC | VGS=10 V, VDS=400 V, ID=8 A |
| Gate-drain charge | Qgd | 7.4 | nC | VGS=10 V, VDS=400 V, ID=8 A |
| Gate plateau voltage | Vplateau | 5.5 | V | VGS=10 V, VDS=400 V, ID=8 A |
| Diode forward voltage | VSD | 1.3 | V | IS=15 A, VGS=0 V |
| Reverse recovery time | trr | 262.4 | ns | VR=400 V, IS=8 A, di/dt=100 A/s |
| Reverse recovery charge | Qrr | 2.9 | C | VR=400 V, IS=8 A, di/dt=100 A/s |
| Peak reverse recovery current | Irrm | 23.4 | A | VR=400 V, IS=8 A, di/dt=100 A/s |
| Product Name | - | OSG65R290DEF | - | TO252 |
| Package Marking | - | OSG65R290DE | - | TO252 |
| Package Type | - | TO252-C | Units/Reel | 2500 |
| Package Type | - | TO252-S | Units/Reel | 2500 |
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