silicon epitaxial planar switching diode PJSEMI 1N4148WA designed for high speed electronic circuits

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Product Description

Product Overview

The 1N4148WA is a silicon epitaxial planar switching diode designed for surface-mounted applications. It features a fast reverse recovery time and is ideal for automated placement, making it suitable for various electronic circuits requiring efficient switching.

Product Attributes

Brand: Pingjingsemi
Material: Silicon Epitaxial Planar
Marking Code: T4

Technical Specifications

Parameter	Symbol	1N4148WA	Unit
Absolute Maximum Ratings
Maximum Repetitive Peak Reverse Voltage	VRRM	100	V
Maximum RMS voltage	VRMS	75	V
Average Rectified Forward Current	IF(AV)	150	mA
Non-repetitive Peak Forward Surge Current (t=1s)	IFSM	0.5	A
Non-repetitive Peak Forward Surge Current (t=1ms)	IFSM	1	A
Non-repetitive Peak Forward Surge Current (t=1s)	IFSM	4	A
Maximum Power Dissipation	PD	400	mW
Operating Temperature	TJ	150	C
Storage Temperature Range	TSTG	-55 to +150	C
Characteristics
Reverse Breakdown Voltage (at IR = 1 A)	V(BR)R	75	V
Maximum Forward Voltage (at IF = 1 mA)	VF	0.715	V
Maximum Forward Voltage (at IF = 10 mA)	VF	0.855	V
Maximum Forward Voltage (at IF = 50 mA)	VF	1.00	V
Maximum Forward Voltage (at IF = 150 mA)	VF	1.25	V
Peak Reverse Current (at VR = 20 V, TJ = 25 C)	IR	0.025	A
Peak Reverse Current (at VR = 75 V, TJ = 25 C)	IR	1	A
Peak Reverse Current (at VR = 25 V, TJ = 150 C)	IR	30	A
Peak Reverse Current (at VR = 75 V, TJ = 150 C)	IR	50	A
Typical Junction Capacitance (at VR = 0 V, f = 1 MHz)	Cj	2	pF
Reverse Recovery Time (at Irr = 0.1 X IR, IF = IR = 10 mA, RL = 100 )	Trr	4	nS