AEC Q101 Qualified onsemi MBRS130LT3G Schottky Power Rectifier with Stable Oxide Passivated Junction
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Product Description
Product Overview
This surface mount Schottky Power Rectifier employs a large area metal-to-silicon Schottky Barrier principle. Featuring epitaxial construction with oxide passivation and metal overlay contact, it is ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in compact surface mount applications. Key advantages include a very low forward voltage drop, a small compact surface mountable package with J-Bend leads, a highly stable oxide-passivated junction, and guard-ring protection. This device is AEC-Q101 Qualified and PPAP Capable.
Product Attributes
- Brand: ON Semiconductor
- Certifications: AEC-Q101 Qualified, PPAP Capable
- Package: SMB (Surface Mount Package)
- Lead Finish: PbFree
- Origin: USA (Assembly Location indicated by 'A')
Technical Specifications
| Part Number | Peak Repetitive Reverse Voltage (VRRM) | Average Rectified Forward Current (IF(AV)) @ TL=120C | Non-Repetitive Peak Surge Current (IFSM) | Operating Junction Temperature (TJ) | Max Instantaneous Forward Voltage (VF) @ 1.0 A, 25C | Max Instantaneous Reverse Current (IR) @ Rated DC Voltage, 25C | Thermal Resistance Junction-to-Lead (JL) | Thermal Resistance Junction-to-Ambient (JA) Min Pad | Thermal Resistance Junction-to-Ambient (JA) 1 Pad |
| MBRS130LT3G | 30 V | 1.0 A | 40 A | 65 to +125 C | 0.395 V | 1.0 mA | 12 C/W | 228.8 C/W | 71.3 C/W |
| SBRS8130LT3G | 30 V | 1.0 A | 40 A | 65 to +125 C | 0.395 V | 1.0 mA | 12 C/W | 228.8 C/W | 71.3 C/W |
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