ORIENTAL SEMI SFS08R08DF Power MOSFET Featuring Low Vth and Low Gate Charge for Power Management Solutions

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Product Description

Product Overview

The SFS08R08DF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor, built on their unique device design for low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. Specifically optimized for synchronous rectification systems with low driving voltage, this MOSFET offers low Vth. It is suitable for applications including PD chargers, motor drivers, switching voltage regulators, DC-DC converters, and switched-mode power supplies.

Product Attributes

Brand: Oriental Semiconductor
Product Line: FSMOS MOSFET
Technology: Enhancement Mode N-Channel Power MOSFET
Certifications: Pb Free, RoHS, Halogen Free

Technical Specifications

Parameter	Symbol	Value	Unit	Test Condition
General Description & Key Performance Parameters
Drain source voltage (min @ Tj(max))	VDS, min	80	V
Pulse drain current	ID, pulse	192	A
Drain-source on-state resistance (max @ VGS=10V)	RDS(ON) max	8	m	VGS=10V
Total gate charge	Qg	28.9	nC
Absolute Maximum Ratings
Drain source voltage	VDS	80	V	Tj=25C unless otherwise noted
Gate source voltage	VGS	20	V	Tj=25C unless otherwise noted
Continuous drain current (TC=25 C)	ID	64	A	1), TC=25 C
Pulsed drain current (TC=25 C)	ID, pulse	192	A	2), TC=25 C
Continuous diode forward current (TC=25 C)	IS	64	A	1), TC=25 C
Diode pulsed current (TC=25 C)	IS, Pulse	192	A	2), TC=25 C
Power dissipation (TC=25 C)	PD	87	W	3), TC=25 C
Single pulsed avalanche energy	EAS	25	mJ	5)
Operation and storage temperature	TstgTj	-55 to 175	C
Thermal Characteristics
Thermal resistance, junction-case	RJC	1.72	C/W
Thermal resistance, junction-ambient	RJA	62	C/W	4)
Electrical Characteristics
Drain-source breakdown voltage	BVDSS	80	V	VGS=0 V, ID=250 A
Gate threshold voltage	VGS(th)	1.0 - 2.5	V	VDS=VGS, ID=250 A
Drain-source on-state resistance	RDS(ON)	6.2 - 8	m	VGS=10 V, ID=12 A
Drain-source on-state resistance	RDS(ON)	7.8 - 10	m	VGS=4.5 V, ID=9 A
Gate-source leakage current	IGSS	100	nA	VGS=20 V
Gate-source leakage current	IGSS	-100	nA	VGS=-20 V
Drain-source leakage current	IDSS	1	A	VDS=80 V, VGS=0 V
Gate resistance	RG	3.3		=1 MHz, Open drain
Dynamic Characteristics
Input capacitance	Ciss	2028	pF	VGS=0 V, VDS=25 V, =100 kHz
Output capacitance	Coss	717	pF	VGS=0 V, VDS=25 V, =100 kHz
Reverse transfer capacitance	Crss	53.9	pF	VGS=0 V, VDS=25 V, =100 kHz
Turn-on delay time	td(on)	22.2	ns	VGS=10 V, VDS=50 V, RG=2.5 , ID=25 A
Rise time	tr	6.3	ns	VGS=10 V, VDS=50 V, RG=2.5 , ID=25 A
Turn-off delay time	td(off)	47.5	ns	VGS=10 V, VDS=50 V, RG=2.5 , ID=25 A
Fall time	tf	8.8	ns	VGS=10 V, VDS=50 V, RG=2.5 , ID=25 A
Gate Charge Characteristics
Total gate charge	Qg	28.9	nC	VGS=10 V, VDS=50 V, ID=25 A
Gate-source charge	Qgs	5.4	nC	VGS=10 V, VDS=50 V, ID=25 A
Gate-drain charge	Qgd	4.9	nC	VGS=10 V, VDS=50 V, ID=25 A
Gate plateau voltage	Vplateau	3.5	V	VGS=10 V, VDS=50 V, ID=25 A
Body Diode Characteristics
Diode forward voltage	VSD	1.3	V	IS=12 A, VGS=0 V
Reverse recovery time	trr	51.3	ns	VR=50 V, IS=25 A, di/dt=100 A/s
Reverse recovery charge	Qrr	60.6	nC	VR=50 V, IS=25 A, di/dt=100 A/s
Peak reverse recovery current	Irrm	2	A	VR=50 V, IS=25 A, di/dt=100 A/s
Package & Pin Information
Product Name		SFS08R08DF		TO252
Package Marking		SFS08R08D
Package Outline Dimensions (TO252-J)
Symbol	mm (Min)	mm (Nom)	mm (Max)
A	2.20	2.30	2.38
A1	0.00	-	0.10
A2	0.90	1.01	1.10
b	0.72	-	0.85
b1	0.71	0.76	0.81
b2	0.72	-	0.90
b3	5.13	5.33	5.46
c	0.47	-	0.60
c1	0.46	0.51	0.56
c2	0.47	-	0.60
D	6.00	6.10	6.20
D1	5.25	-	-
E	6.50	6.60	6.70
E1	4.70	-	-
e	2.186	2.286	2.386
H	9.80	10.10	10.40
L	1.40	1.50	1.70
L1	2.90	REF	-
L2	0.508	BSC	-
L3	0.90	-	1.25
L4	0.60	0.80	1.00
L5	0.15	-	0.75
L6	1.80	REF	-
	0	-	8
1	5	7	9
2	5	7	9
Ordering Information
Package Type	Units/ Reel	Reels / Inner Box	Units/ Inner Box	Inner Boxes/ Carton Box
TO252-J	2500	2	5000	5