Power MOSFET ORIENTAL SEMI OSG70R600FF Featuring Charge Balance Technology for Switching Performance
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Product Description
Product Overview
The OSG70R600FF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor's GreenMOS Generic series. It leverages charge balance technology for exceptional low on-resistance and reduced gate charge, minimizing conduction and switching losses. This MOSFET is engineered for superior switching performance and robust avalanche capability, making it ideal for high power density applications demanding the highest efficiency standards. Key applications include PC power supplies, LED lighting, telecom power, server power, EV chargers, and solar/UPS systems.
Product Attributes
- Brand: Oriental Semiconductor
- Product Series: GreenMOS Generic
- Technology: Charge Balance Technology
- Package Type: TO220F-C
- Certifications: Pb Free, RoHS, Halogen Free
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Drain-source voltage (min @ Tj(max)) | VDS | 750 | V | Tj(max) |
| Pulse drain current | ID, pulse | 24 | A | TC=25 C |
| RDS(ON) (max @ VGS=10V) | RDS(ON) | 600 | m | VGS=10V |
| Total gate charge | Qg | 12.2 | nC | VGS=10 V, VDS=400 V, ID=4 A |
| Drain-source breakdown voltage | BVDSS | 700 | V | VGS=0 V, ID=250 A |
| Gate threshold voltage | VGS(th) | 2.9 - 3.9 | V | VDS=VGS, ID=250 A |
| Drain-source on- state resistance | RDS(ON) | 0.53 - 0.60 | VGS=10 V, ID=4 A | |
| Continuous drain current | ID | 8 | A | TC=25 C |
| Continuous drain current | ID | 5 | A | TC=100 C |
| Continuous diode forward current | IS | 8 | A | TC=25 C |
| Power dissipation | PD | 28 | W | TC=25 C |
| Single pulsed avalanche energy | EAS | 130 | mJ | VDD=100 V, VGS=10 V, L=40 mH, starting Tj=25 C |
| Thermal resistance, junction-case | RJC | 4.46 | C/W | - |
| Thermal resistance, junction-ambient | RJA | 62.5 | C/W | Mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 C |
| Input capacitance | Ciss | 587.1 | pF | VGS=0 V, VDS=50 V, =1 MHz |
| Output capacitance | Coss | 40.1 | pF | VGS=0 V, VDS=50 V, =1 MHz |
| Reverse transfer capacitance | Crss | 1.4 | pF | VGS=0 V, VDS=50 V, =1 MHz |
| Turn-on delay time | td(on) | 30.3 | ns | VGS=10 V, VDS=400 V, RG=2 , ID=4 A |
| Rise time | tr | 16.4 | ns | VGS=10 V, VDS=400 V, RG=2 , ID=4 A |
| Turn-off delay time | td(off) | 59.9 | ns | VGS=10 V, VDS=400 V, RG=2 , ID=4 A |
| Fall time | tf | 7.1 | ns | VGS=10 V, VDS=400 V, RG=2 , ID=4 A |
| Total gate charge | Qg | 12.2 | nC | VGS=10 V, VDS=400 V, ID=4 A |
| Gate-source charge | Qgs | 2.9 | nC | VGS=10 V, VDS=400 V, ID=4 A |
| Gate-drain charge | Qgd | 4.9 | nC | VGS=10 V, VDS=400 V, ID=4 A |
| Gate plateau voltage | Vplateau | 5.7 | V | VGS=10 V, VDS=400 V, ID=4 A |
| Diode forward voltage | VSD | 1.3 | V | IS=8 A, VGS=0 V |
| Reverse recovery time | trr | 190.8 | ns | VR=400 V, IS=4 A, di/dt=100 A/s |
| Reverse recovery charge | Qrr | 1.9 | C | VR=400 V, IS=4 A, di/dt=100 A/s |
| Peak reverse recovery current | Irrm | 21.9 | A | VR=400 V, IS=4 A, di/dt=100 A/s |
| Product Name | - | OSG70R600FF | - | TO220F |
| Package Marking | - | OSG70R600F | - | TO220F |
Package Outline Dimensions (TO220F-C):
| Symbol | mm (Min) | mm (Nom) | mm (Max) |
|---|---|---|---|
| E | 9.96 | 10.16 | 10.36 |
| A | 4.50 | 4.70 | 4.90 |
| A1 | 2.34 | 2.54 | 2.74 |
| A4 | 2.56 | 2.76 | 2.96 |
| c | 0.40 | 0.50 | 0.65 |
| D | 15.57 | 15.87 | 16.17 |
| H1 | 6.70 (REF) | - | - |
| e | - | 2.54 (BSC) | - |
| L | 12.68 | 12.98 | 13.28 |
| L1 | 2.88 | 3.03 | 3.18 |
| P | 3.03 | 3.18 | 3.38 |
| P3 | 3.15 | 3.45 | 3.65 |
| F3 | 3.15 | 3.30 | 3.45 |
| G3 | 1.25 | 1.35 | 1.55 |
| b1 | 1.18 | 1.28 | 1.43 |
| b2 | 0.70 | 0.80 | 0.95 |
Ordering Information:
| Package Type | Units/Tube | Tubes/Inner Box | Units/Inner Box | Inner Boxes/Carton Box | Units/Carton Box |
|---|---|---|---|---|---|
| TO220F-C | 50 | 20 | 1000 | 6 | 6000 |
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