ORIENTAL SEMI OSG65R380DEF Power MOSFET N Channel 700V 33A Designed for EMI Compliance and Switching
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Product Description
Product Overview
The OSG65R380DEF is a high-voltage N-Channel Power MOSFET from Oriental Semiconductor's GreenMOS E series. It utilizes charge balance technology to achieve superior low on-resistance and reduced gate charge, minimizing conduction losses and enhancing switching performance. This MOSFET is engineered for a balance between EMI and efficiency, enabling power supply systems to reach high efficiency levels while meeting EMI standards. It is ideal for applications such as LED lighting, chargers, adapters, TV power, telecom power, server power, and solar/UPS systems.
Product Attributes
- Brand: Oriental Semiconductor
- Product Line: GreenMOS E series
- Technology: Charge Balance Technology
- Channel Type: N-Channel
- Package Type: TO252
- Certifications: Pb Free, RoHS, Halogen Free
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Drain-source voltage (min @ Tj(max)) | VDS, min @ Tj(max) | 700 | V | |
| Pulse drain current | ID, pulse | 33 | A | |
| RDS(ON) (max @ VGS=10V) | RDS(ON), max @ VGS=10V | 380 | m | |
| Total gate charge | Qg | 15 | nC | |
| Drain-source voltage | VDS | 650 | V | Tj=25C unless otherwise noted |
| Gate-source voltage | VGS | 30 | V | Tj=25C unless otherwise noted |
| Continuous drain current (TC=25 C) | ID | 11 | A | Tj=25C unless otherwise noted |
| Continuous drain current (TC=100 C) | ID | 7 | A | Tj=25C unless otherwise noted |
| Continuous diode forward current (TC=25 C) | IS | 15 | A | Tj=25C unless otherwise noted |
| Power dissipation (TC=25 C) | PD | 83 | W | Tj=25C unless otherwise noted |
| Single pulsed avalanche energy | EAS | 200 | mJ | Tj=25C unless otherwise noted |
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | VDS=0480 V, Tj=25C unless otherwise noted |
| Reverse diode dv/dt | dv/dt | 15 | V/ns | VDS=0480 V, ISDID, Tj=25C unless otherwise noted |
| Operation and storage temperature | Tstg, Tj | -55 to 150 | C | |
| Thermal resistance, junction-case | RJC | 1.5 | C/W | |
| Thermal resistance, junction-ambient | RJA | 62 | C/W | Device mounted on 1 in FR-4 board with 2oz. Copper, still air environment, Ta=25 C |
| Drain-source breakdown voltage | BVDSS | 650 | V | VGS=0 V, ID=250 A |
| Gate threshold voltage | VGS(th) | 2.9 - 3.9 | V | VDS=VGS, ID=250 A |
| Drain-source on-state resistance | RDS(ON) | 0.30 - 0.38 | VGS=10 V, ID=5.5 A | |
| Gate-source leakage current | IGSS | 100 | nA | VGS=30 V |
| Drain-source leakage current | IDSS | 1 | A | VDS=650 V, VGS=0 V |
| Input capacitance | Ciss | 761.3 | pF | VGS=0 V, VDS=50 V, =1 MHz |
| Output capacitance | Coss | 62.0 | pF | VGS=0 V, VDS=50 V, =1 MHz |
| Reverse transfer capacitance | Crss | 2.5 | pF | VGS=0 V, VDS=50 V, =1 MHz |
| Turn-on delay time | td(on) | 31.0 | ns | VGS=10 V, VDS=400 V, RG=2 , ID=6 A |
| Rise time | tr | 18.8 | ns | VGS=10 V, VDS=400 V, RG=2 , ID=6 A |
| Turn-off delay time | td(off) | 58.3 | ns | VGS=10 V, VDS=400 V, RG=2 , ID=6 A |
| Fall time | tf | 6.5 | ns | VGS=10 V, VDS=400 V, RG=2 , ID=6 A |
| Total gate charge | Qg | 15.0 | nC | VGS=10 V, VDS=400 V, ID=6 A |
| Gate-source charge | Qgs | 3.7 | nC | VGS=10 V, VDS=400 V, ID=6 A |
| Gate-drain charge | Qgd | 5.8 | nC | VGS=10 V, VDS=400 V, ID=6 A |
| Gate plateau voltage | Vplateau | 5.7 | V | VGS=10 V, VDS=400 V, ID=6 A |
| Diode forward voltage | VSD | 1.3 | V | IS=11 A, VGS=0 V |
| Reverse recovery time | trr | 239.7 | ns | VR=400 V, IS=6 A, di/dt=100 A/s |
| Reverse recovery charge | Qrr | 2.5 | C | VR=400 V, IS=6 A, di/dt=100 A/s |
| Peak reverse recovery current | Irrm | 21.2 | A | VR=400 V, IS=6 A, di/dt=100 A/s |
| Product Name | OSG65R380DEF | TO252 | ||
| Package Type (Ordering) - TO252-C | 2500 | Units/Reel | ||
| Package Type (Ordering) - TO252-J | 2500 | Units/Reel |
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