Enhancement Mode N Channel Power MOSFET ORIENTAL SEMI SFG100N08PF with Low RDS ON and Fast Switching
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Product Description
Product Overview
The SFG100N08PF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor, built on their unique SFGMOS device design. This series is optimized for high systems with gate driving voltages exceeding 10V, offering low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. It is ideal for applications such as switched-mode power supplies, motor drivers, battery protection, DC-DC converters, solar inverters, and UPS/energy inverters.
Product Attributes
- Brand: Oriental Semiconductor
- Product Line: SFGMOS
- Package Type: TO220
- Certifications: Pb Free, RoHS, Halogen Free
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 80 | V | VGS=0 V, ID=250 A |
| Gate threshold voltage | VGS(th) | 2.0 - 4.0 | V | VDS=VGS, ID=250 A |
| Drain-source on-state resistance | RDS(ON) | 6 - 6.5 | m | VGS=10 V, ID=12 A |
| Gate-source leakage current | IGSS | - 100 | nA | VGS=20 V |
| Drain-source leakage current | IDSS | 1 | A | VDS=80 V, VGS=0 V |
| Input capacitance | Ciss | 4242 | pF | VGS=0 V, VDS=25 V, =100 kHz |
| Output capacitance | Coss | 1779 | pF | VGS=0 V, VDS=25 V, =100 kHz |
| Reverse transfer capacitance | Crss | 84.1 | pF | VGS=0 V, VDS=25 V, =100 kHz |
| Total gate charge | Qg | 53.2 | nC | VGS=10 V, VDS=40 V, ID=50 A |
| Gate-source charge | Qgs | 17.5 | nC | VGS=10 V, VDS=40 V, ID=50 A |
| Gate-drain charge | Qgd | 7.2 | nC | VGS=10 V, VDS=40 V, ID=50 A |
| Diode forward voltage | VSD | 1.3 | V | IS=12 A, VGS=0 V |
| Reverse recovery time | trr | 82 | ns | VR=50 V, IS=50 A, di/dt=100 A/s |
| Reverse recovery charge | Qrr | 164 | nC | VR=50 V, IS=50 A, di/dt=100 A/s |
| Continuous drain current | ID | 100 | A | TC=25 C |
| Pulsed drain current | ID, pulse | 300 | A | TC=25 C |
| Continuous diode forward current | IS | 100 | A | TC=25 C |
| Power dissipation | PD | 148 | W | TC=25 C |
| Single pulsed avalanche energy | EAS | 135 | mJ | VDD=50 V,VGS=10 V, L=0.3 mH, starting Tj=25 C |
| Thermal resistance, junction-case | RJC | 0.84 | C/W | |
| Thermal resistance, junction-ambient | RJA | 62 | C/W | Device mounted on 1 in FR-4 board with 2oz. Copper, still air, Ta=25 C |
| Operation and storage temperature | TstgTj | -55 to 150 | C |
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