Low On Resistance Enhancement Mode MOSFET ORIENTAL SEMI OSG70R750DF for Power Conversion Applications
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Product Description
Product Overview
The OSG70R750DF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor's GreenMOS series. This high-voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge, engineered to minimize conduction and switching losses. It offers superior switching performance and robust avalanche capability, making it optimized for extreme switching performance and high power density applications. Ideal for meeting the highest efficiency standards, it is suitable for PC power, LED lighting, telecom power, server power, EV chargers, and solar/UPS applications.Product Attributes
- Brand: Oriental Semiconductor
- Product Line: GreenMOS
- Product Name: OSG70R750DF
- Package Type: TO252
- Certifications: Pb Free, RoHS, Halogen Free
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 700 | V | VGS=0 V, ID=250 A |
| Gate threshold voltage | VGS(th) | 2.0 - 4.0 | V | VDS=VGS, ID=250 A |
| Drain-source on- state resistance | RDS(ON) | 0.65 - 0.75 | VGS=10 V, ID=4 A | |
| Gate-source leakage current | IGSS | 100 | nA | VGS=30 V |
| Drain-source leakage current | IDSS | 1 | A | VDS=700 V, VGS=0 V |
| Input capacitance | Ciss | 459 | pF | VGS=0 V, VDS=50 V, =1 MHz |
| Output capacitance | Coss | 33.8 | pF | VGS=0 V, VDS=50 V, =1 MHz |
| Reverse transfer capacitance | Crss | 1.44 | pF | VGS=0 V, VDS=50 V, =1 MHz |
| Turn-on delay time | td(on) | 17 | ns | VGS=10 V, VDS=400 V, RG=25 , ID=4 A |
| Rise time | tr | 10.1 | ns | VGS=10 V, VDS=400 V, RG=25 , ID=4 A |
| Turn-off delay time | td(off) | 28.9 | ns | VGS=10 V, VDS=400 V, RG=25 , ID=4 A |
| Fall time | tf | 23.6 | ns | VGS=10 V, VDS=400 V, RG=25 , ID=4 A |
| Total gate charge | Qg | 9.2 | nC | VGS=10 V, VDS=400 V, ID=4 A |
| Gate-source charge | Qgs | 2.4 | nC | VGS=10 V, VDS=400 V, ID=4 A |
| Gate-drain charge | Qgd | 3.5 | nC | VGS=10 V, VDS=400 V, ID=4 A |
| Gate plateau voltage | Vplateau | 5.6 | V | VGS=10 V, VDS=400 V, ID=4 A |
| Diode forward voltage | VSD | 1.3 | V | IS=4 A, VGS=0 V |
| Reverse recovery time | trr | 212 | ns | VR=400 V, IS=4 A, di/dt=100 A/s |
| Reverse recovery charge | Qrr | 1.7 | C | VR=400 V, IS=4 A, di/dt=100 A/s |
| Peak reverse recovery current | Irrm | 14.2 | A | VR=400 V, IS=4 A, di/dt=100 A/s |
| Continuous drain current | ID | 7 | A | TC=25 C |
| Continuous drain current | ID | 4.4 | A | TC=100 C |
| Pulsed drain current | ID, pulse | 21 | A | TC=25 C |
| Continuous diode forward current | IS | 7 | A | TC=25 C |
| Diode pulsed current | IS, pulse | 21 | A | TC=25 C |
| Power dissipation | PD | 63 | W | TC=25 C |
| Single pulsed avalanche energy | EAS | 190 | mJ | VDD=100 V, VGS=10 V, L=10 mH, starting Tj=25 C |
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | VDS=0480 V |
| Reverse diode dv/dt | dv/dt | 15 | V/ns | VDS=0480 V, ISDID |
| Operation and storage temperature | Tstg, Tj | -55 to 150 | C | |
| Thermal resistance, junction-case | RJC | 2 | C/W | |
| Thermal resistance, junction-ambient | RJA | 62 | C/W | Device mounted on 1 in FR-4 board with 2oz. Copper, still air, Ta=25 C |
| Package Type | Units/Reel | Reels/Inner Box | Units/Inner Box | Inner Boxes/Carton Box | Units/Carton Box |
|---|---|---|---|---|---|
| TO252-C | 2500 | 2 | 5000 | 5 | 25000 |
| TO252-J | 2500 | 2 | 5000 | 5 | 25000 |
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