OSG65R1K4AF MOSFET by Oriental Semiconductor Offering Low RDSon and High Avalanche Energy Capability

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Product Description

Product Overview

The OSG65R1K4xF series of Enhancement Mode N-Channel Power MOSFETs from Oriental Semiconductor utilizes advanced GreenMOSTM technology to deliver exceptional performance. These MOSFETs are engineered for low RDS(on), minimal gate charge, fast switching speeds, and excellent avalanche characteristics. They are ideally suited for demanding applications such as active power factor correction and switching mode power supplies, offering low switching loss and high stability for hard switching PWM.

Product Attributes

Brand: Oriental Semiconductor
Technology: GreenMOSTM
Channel Type: N-Channel
Mode: Enhancement Mode
Certifications: Pb Free, RoHS, Halogen Free

Technical Specifications

Model	Package	VDS (V)	ID (A) @ TC=25	ID, pulse (A)	RDS(ON) () @ VGS=10V	Qg (nC)	Applications
OSG65R1K4AF	TO251	650	4	12	1.4 (max)	6.7	Lighting, Server power supply, Charger
OSG65R1K4DF	TO252	650	4	12	1.4 (max)	6.7	Lighting, Server power supply, Charger
OSG65R1K4FF	TO220F	650	4	12	1.4 (max)	6.7	Lighting, Server power supply, Charger
OSG65R1K4PF	TO220	650	4	12	1.4 (max)	6.7	Lighting, Server power supply, Charger

Other Technical Data

Parameter	Symbol	Value	Unit	Test Condition
Drain source voltage	VDS	650	V	Tj=25
Gate source voltage	VGS	30	V	Tj=25
Continuous drain current	ID	2.5	A	TC=100
Power dissipation (TO251, TO252, TO220)	PD	28.4	W	TC=25
Power dissipation (TO220F)	PD	24	W	TC=25
Single pulsed avalanche energy	EAS	112	mJ	Tj=25
MOSFET dv/dt ruggedness	dv/dt	50	V/ns	VDS=0480 V
Reverse diode dv/dt	dv/dt	15	V/ns	VDS=0480 V, ISDID
Operation and storage temperature	Tstg, Tj	-55 to 150
Drain-source breakdown voltage	BVDSS	650 (min) / 700 (typ) / 770 (max)	V	VGS=0 V, ID=250 A
Gate threshold voltage	VGS(th)	2.0 (min) / 4.0 (max)	V	VDS=VGS, ID=250 A
Drain-source on-state resistance	RDS(ON)	1.2 (min) / 1.4 (max)		VGS=10 V, ID=2 A
Gate-source leakage current	IGSS	100	nA	VGS=30 V
Drain-source leakage current	IDSS	1	A	VDS=650 V, VGS=0 V
Input capacitance	Ciss	259.9	pF	VGS=0 V, VDS=50 V, =1 MHz
Output capacitance	Coss	21.1	pF	VGS=0 V, VDS=50 V, =1 MHz
Reverse transfer capacitance	Crss	0.9	pF	VGS=0 V, VDS=50 V, =1 MHz
Turn-on delay time	td(on)	30.9	ns	VGS=10 V, VDS=380 V, RG=25 , ID=4 A
Rise time	tr	20.7	ns	VGS=10 V, VDS=380 V, RG=25 , ID=4 A
Turn-off delay time	td(off)	56.3	ns	VGS=10 V, VDS=380 V, RG=25 , ID=4 A
Fall time	tf	28.7	ns	VGS=10 V, VDS=380 V, RG=25 , ID=4 A
Total gate charge	Qg	6.7	nC	ID=4 A, VDS=400 V, VGS=10 V
Gate-source charge	Qgs	1.5	nC	ID=4 A, VDS=400 V, VGS=10 V
Gate-drain charge	Qgd	3.2	nC	ID=4 A, VDS=400 V, VGS=10 V
Gate plateau voltage	Vplateau	6.4	V	ID=4 A, VDS=400 V, VGS=10 V
Diode forward current	IS	4	A	VGS
Pulsed source current	ISP	12	A
Diode forward voltage	VSD	1.3	V	IS=4 A, VGS=0 V
Reverse recovery time	trr	162	ns	VR=400 V, IS=4 A, di/dt=100 A/s
Reverse recovery charge	Qrr	1.2	C	VR=400 V, IS=4 A, di/dt=100 A/s
Peak reverse recovery current	Irrm	7	A	VR=400 V, IS=4 A, di/dt=100 A/s