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Low on resistance Power MOSFET ORIENTAL SEMI OSG55R140HF ideal for PC power telecom and UPS applications

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The Oriental Semiconductor OSG55R140HF is a high-voltage N-Channel Power MOSFET from the GreenMOS Generic series, engineered with charge balance technology. It offers outstanding low on-resistance and reduced gate charge, minimizing conduction and switching losses for superior performance. This MOSFET is optimized for high power density applications requiring the highest efficiency standards, making it suitable for PC power, LED lighting, telecom power, server power, EV chargers, and solar/UPS systems.

Product Attributes

  • Brand: Oriental Semiconductor
  • Product Series: GreenMOS Generic
  • Technology: Charge Balance Technology
  • RoHS/Pb Free: Yes
  • Halogen Free: Yes

Technical Specifications

Parameter Symbol Value Unit Test Condition
Drain-source breakdown voltage BVDSS 550 V VGS=0 V, ID=250 uA
Gate threshold voltage VGS(th) 2 - 4 V VDS=VGS, ID=250 uA
Drain-source on-state resistance RDS(ON) 0.11 - 0.14 VGS=10 V, ID=11.5 A
Gate-source leakage current IGSS -100 - 100 nA VGS=30 V
Drain-source leakage current IDSS 1 A VDS=550 V, VGS=0 V
Continuous drain current (TC=25 C) ID 23 A TC=25 C
Continuous drain current (TC=100 C) ID 14.5 A TC=100 C
Pulsed drain current (TC=25 C) ID, pulse 69 A TC=25 C
Continuous diode forward current (TC=25 C) IS 23 A TC=25 C
Diode pulsed current (TC=25 C) IS, pulse 69 A TC=25 C
Power dissipation (TC=25 C) PD 151 W TC=25 C
Single pulsed avalanche energy EAS 330 mJ VDD=100 V, VGS=10 V, L=80 mH, starting Tj=25 C
MOSFET dv/dt ruggedness dv/dt 50 V/ns VDS=0480 V
Reverse diode dv/dt dv/dt 15 V/ns VDS=0480 V, ISDID
Operation and storage temperature Tstg, Tj -55 to 150 C
Thermal resistance, junction-case RJC 0.82 C/W
Thermal resistance, junction-ambient RJA 62 C/W Mounted on 1 in FR-4 board with 2oz. Copper, still air, Ta=25 C
Input capacitance Ciss 1408.8 pF VGS=0 V, VDS=50 V, =1 MHz
Output capacitance Coss 151.2 pF VGS=0 V, VDS=50 V, =1 MHz
Reverse transfer capacitance Crss 4.14 pF VGS=0 V, VDS=50 V, =1 MHz
Turn-on delay time td(on) 40.5 ns VGS=10 V, VDS=420 V, RG=25 , ID=23 A
Rise time tr 73.5 ns VGS=10 V, VDS=420 V, RG=25 , ID=23 A
Turn-off delay time td(off) 63.6 ns VGS=10 V, VDS=420 V, RG=25 , ID=23 A
Fall time tf 73.5 ns VGS=10 V, VDS=420 V, RG=25 , ID=23 A
Total gate charge Qg 24.1 nC VGS=10 V, VDS=420 V, ID=23 A
Gate-source charge Qgs 9 nC VGS=10 V, VDS=420 V, ID=23 A
Gate-drain charge Qgd 7.4 nC VGS=10 V, VDS=420 V, ID=23 A
Gate plateau voltage Vplateau 5.6 V VGS=10 V, VDS=420 V, ID=23 A
Diode forward voltage VSD 1.4 V IS=23 A, VGS=0 V
Reverse recovery time trr 372 ns VR=400 V, IS=23 A, di/dt=100 A/s
Reverse recovery charge Qrr 5.1 C VR=400 V, IS=23 A, di/dt=100 A/s
Peak reverse recovery current Irrm 25.6 A VR=400 V, IS=23 A, di/dt=100 A/s
Product Name OSG55R140HF
Package Marking OSG55R140H
Package Type TO247
TO247-C Dimensions (mm) A 4.80 - 5.20 mm
A1 2.21 - 2.59 mm
A2 1.85 - 2.15 mm
b 1.11 - 1.36 mm
b2 1.91 - 2.21 mm
b4 2.91 - 3.21 mm
c 0.51 - 0.75 mm
D 20.80 - 21.30 mm
D1 16.25 - 16.85 mm
E 15.50 - 16.10 mm
E1 13.00 - 13.60 mm
E2 4.80 - 5.20 mm
E3 2.30 - 2.70 mm
e 5.44 BSC
L 19.82 - 20.22 mm
L1 - 4.30 mm
P 3.40 - 3.80 mm
P1 - 7.30 mm
S 6.15 BSC
TO247-J Dimensions (mm) A 4.90 - 5.20 mm
A1 2.31 - 2.59 mm
A2 1.90 - 2.15 mm
b 1.16 - 1.36 mm
b2 1.96 - 2.21 mm
b4 2.96 - 3.21 mm
c 0.59 - 0.75 mm
D 20.90 - 21.30 mm
D1 16.25 - 16.85 mm
E 15.70 - 16.10 mm
E1 13.10 - 13.60 mm
E2 4.40 - 5.20 mm
E3 2.40 - 2.70 mm
e 5.436 BSC
L 19.80 - 20.22 mm
L1 - 4.30 mm
P 3.40 - 3.80 mm
P1 7.00 mm
P2 2.40 - 7.30 mm
Q 5.60 mm
S 6.05 - 7.30 mm
T 0.80 mm
U 6.00 BSC

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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