power switching device onsemi FGA40N65SMD 650 volt 40 amp field stop IGBT for industrial applications
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Product Description
Product Overview
The FGA40N65SMD is a 650 V, 40 A Field Stop IGBT from ON Semiconductor, formerly Fairchild Semiconductor. This second-generation IGBT series utilizes innovative Field Stop IGBT technology, offering optimal performance with low conduction and switching losses. It is designed for critical applications such as photovoltaic inverters, UPS, welding machines, induction heating, communication power supplies, and ESS.
Product Attributes
- Brand: ON Semiconductor (formerly Fairchild Semiconductor)
- Certifications: RoHS compliant
Technical Specifications
| Device Number | Package | Collector-Emitter Voltage (VCES) | Collector Current (IC @ TC = 25C) | Collector Current (IC @ TC = 100C) | Collector Pulse Current (ICM) | Diode Forward Current (IF @ TC = 25C) | Diode Forward Current (IF @ TC = 100C) | Diode Max Forward Pulse Current (IFM) | Max Power Dissipation (PD @ TC = 25C) | Max Power Dissipation (PD @ TC = 100C) | Operating Junction Temperature (TJ) | Storage Temperature Range (Tstg) | Pin Temperature for Soldering (TL) | RJC(IGBT) | RJC(Diode) | RJA | VGE(th) | VCE(sat) @ IC = 40 A, VGE = 15 V | Cies | Coes | Cres | td(on) @ TC = 25C | tr @ TC = 25C | td(off) @ TC = 25C | tf @ TC = 25C | Eon @ TC = 25C | Eoff @ TC = 25C | Ets @ TC = 25C | td(on) @ TC = 175C | tr @ TC = 175C | td(off) @ TC = 175C | tf @ TC = 175C | Eon @ TC = 175C | Eoff @ TC = 175C | Ets @ TC = 175C | Qg | Qge | Qgc | VFM @ IF = 20 A, TC = 25C | VFM @ IF = 20 A, TC = 175C | Erec @ TC = 175C | trr @ TC = 25C | trr @ TC = 175C | Irr @ TC = 25C | Irr @ TC = 175C | Qrr @ TC = 25C | Qrr @ TC = 175C |
| FGA40N65SMD | TO-3P | 650 V | 80 A | 40 A | 120 A | 40 A | 20 A | 120 A | 349 W | 174 W | -55 to +175 C | -55 to +175 C | 300 C | 0.43 C/W | 1.5 C/W | 40 C/W | 3.5 - 6.0 V | 1.9 V | 1880 pF | 180 pF | 50 pF | 12 ns | 20 ns | 92 ns | 13 ns | 0.82 mJ | 0.26 mJ | 1.08 mJ | 15 ns | 22 ns | 116 ns | 16 ns | 1.08 mJ | 0.60 mJ | 1.68 mJ | 119 - 180 nC | 13 - 20 nC | 58 - 90 nC | 2.1 - 2.6 V | 1.7 V | 96 J | 42 ns | 200 ns | 3.6 A | 8.0 A | 76 nC | 800 nC |
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