Durable OSEN IRFZ44NPBF 60V NCHANNEL MOSFET offering fast switching and high power dissipation capabilities
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The IRFZ44NPBF is a 60V N-CHANNEL MOSFET from OSEN, designed for high efficiency and ruggedness. It features fast switching speeds, high input impedance, low-level drive, and tested avalanche energy. This MOSFET is ideal for applications such as high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.
Product Attributes
- Brand: OSEN
- Publication Order Number: IRFZ44NPBF
- Package: TO-220
Technical Specifications
| Parameters | Unit | Conditions | Min | Typ | Max | |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage (VDSS) | V | 60 | ||||
| Gate-Source Voltage-Continuous (VGS) | V | 20 | ||||
| Drain Current-Continuous (ID) (Note 2) | A | 50 | ||||
| Drain Current-Single Pulsed (IDM) (Note 1) | A | 200 | ||||
| Power Dissipation (PD) (Note 2) | W | 130 | ||||
| Max.Operating junction temperature (Tj) | 150 | |||||
| Electrical Characteristics (Tc=25C unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage (BVDSS) (Note 1) | V | ID=250A VGS=0VTJ=25C | 60 | |||
| Gate Threshold Voltage (VGS(th)) | V | VDS=VGSID=250A | 2.0 | 4.0 | ||
| Drain-Source On-Resistance (RDS(on)) | m | VGS=10VID=1A | 18 | |||
| Gate-Body Leakage Current (IGSS) | nA | VGS=20VVDS=0 | 100 | |||
| Zero Gate Voltage Drain Current (IDSS) | A | VDS=60VVGS=0 | 1 | |||
| Forward Transconductance (gfs) | S | VDS=30VID=25A | 15 | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time (Td(on)) | ns | VDS=30VID=25A RG=50Note 2 | 60 | |||
| Rise Time (Tr) | ns | 185 | ||||
| Turn-Off Delay Time (Td(off)) | ns | 75 | ||||
| Fall Time (Tf) | ns | 60 | ||||
| Total Gate Charge (Qg) | nC | VDS=48V VGS=10V ID=50ANote 2 | 39 | |||
| Gate-Source Charge (Qgs) | nC | 9.3 | ||||
| Gate-Drain Charge (Qgd) | nC | 13 | ||||
| Dynamic Characteristics | ||||||
| Input Capacitance (Ciss) | pF | VDS=25VVGS=0 f=1MHz | 880 | |||
| Output Capacitance (Coss) | pF | 430 | ||||
| Reverse Transfer Capacitance (Crss) | pF | 110 | ||||
| Diode Characteristics | ||||||
| Continuous Drain-Source Diode Forward Current (IS) (Note 2) | A | 50 | ||||
| Diode Forward On-Voltage (VSD) | V | IS=20AVGS=0 | 1.4 | |||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction to Case (Rth(j-c)) | /W | 0.96 | ||||
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Sellina