N Channel IGBT Power Module onsemi FGY100T120SWD 1200 Volt 100 Amp with Gen7 Diode in TO247 Package
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Product Description
Product Overview
The FGY100T120SWD is a 1200 V, 100 A N-Channel IGBT Power Module utilizing novel Field Stop 7th generation IGBT technology and a Gen7 Diode in a TO247 3-lead package. It offers optimized performance with low switching and conduction losses, making it ideal for high-efficiency operations in applications such as Solar, UPS, and Energy Storage Systems (ESS).
Product Attributes
- Brand: onsemi
- Technology: Field Stop VII (FS7)
- Package: TO247-3L
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Collector-to-Emitter Voltage | VCES | 1200 | V | |
| Gate-to-Emitter Voltage | VGES | ±20 | V | |
| Collector Current (TC = 100C) | IC | 100 | A | TC = 100C |
| Power Dissipation (TC = 100C) | PD | 433 | W | TC = 100C |
| Diode Forward Current (TC = 100C) | IF | 100 | A | TC = 100C |
| Maximum Junction Temperature | TJ | 175 | °C | |
| Collector-to-Emitter Saturation Voltage | VCE(SAT) | 1.35 - 2.0 | V | VGE = 15 V, IC = 100 A, TJ = 25°C |
| Gate Threshold Voltage | VGE(TH) | 5.6 - 7.4 | V | VGE = VCE, IC = 100 mA |
| Thermal Resistance, Junction-to-Case (IGBT) | R JC | 0.17 | °C/W | |
| Thermal Resistance, Junction-to-Case (Diode) | R JC | 0.29 | °C/W | |
| Thermal Resistance, Junction-to-Ambient | R JA | 40 | °C/W | |
| Forward Voltage (IF = 100 A, TJ = 25°C) | VF | 1.62 - 2.22 | V | IF = 100 A, TJ = 25°C |
| Reverse Recovery Time (IF = 100 A, TJ = 25°C) | trr | 261 | ns | VR = 600 V, IF = 100 A, dIF/dt = 1000 A/μs, TJ = 25°C |
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Sellina