N Channel Enhancement Mode MOSFET PJSEMI PJM2312JNSA with Low RDS on and 6A Continuous Drain Current
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The PJM2312JNSA is an N-Channel Enhancement Mode Power MOSFET from Pingjingsemi, featuring advanced trench technology. It is designed for applications such as load switching, PWM applications, and power management. The device is RoHS and Reach compliant, and is Halogen and Antimony Free. It offers a VDS of 20V and ID of 6A, with low RDS(on) values.
Product Attributes
- Brand: Pingjingsemi
- Certifications: RoHS and Reach Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Drain Current-Continuous | ID | 6 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 20 | A | ||
| Maximum Power Dissipation | PD | 1 | W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | +150 | °C | ||
| Thermal Resistance,Junction-to-Ambient | RθJA | Note2 | 125 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250μA | 20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=20V,VGS=0V | 1 | μA | ||
| Gate-Body Leakage Current | IGSS | VGS=±12V,VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | Note3,VDS=VGS,ID=250μA | 0.45 | 0.7 | 1 | V |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=4.5V,ID=4.5A | 18 | 25 | mΩ | |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=2.5V,ID=4A | 21 | 35 | mΩ | |
| Forward Transconductance | gFS | Note3,VDS=5V,ID=1A | 5 | S | ||
| Input Capacitance | Ciss | VDS=8V,VGS=0V,f=1MHz | 688 | pF | ||
| Output Capacitance | Coss | 102 | pF | |||
| Reverse Transfer Capacitance | Crss | 90 | pF | |||
| Gate Resistance | Rg | VDS=0V,VGS=0V,f=1MHz | 32 | Ω | ||
| Total Gate Charge | Qg | VDS=10V,ID=3A, VGS=0V~4.5V | 9.3 | nC | ||
| Gate-Source Charge | Qgs | 1.5 | nC | |||
| Gate-Drain Charge | Qgd | 2 | nC | |||
| Turn-on Delay Time | td(on) | VDD=10V,ID=3A, VGS=4.5V,RGEN=3Ω | 4 | nS | ||
| Turn-on Rise Time | tr | 18 | nS | |||
| Turn-off Delay Time | td(off) | 106 | nS | |||
| Turn-off Fall Time | tf | 64 | nS | |||
| Diode Forward Voltage | VSD | Note3,VGS=0V,IS=6A | 1.2 | V | ||
| Diode Forward Current | IS | Note2 | 6 | A | ||
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina