Field Stop IGBT onsemi FGH40N60UFDTU 600 Volt 40 Amp Optimized for UPS Telecom and Welding Power Circuits
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Product Description
FGH40N60UFD IGBT - Field Stop 600 V, 40 A
Utilizing novel Field Stop IGBT technology, ON Semiconductor's field stop IGBTs deliver optimal performance for applications such as solar inverters, UPS, welders, microwave ovens, telecom, ESS, and PFC. These devices are designed for scenarios requiring low conduction and switching losses, offering high current capability, low saturation voltage (VCE(sat) = 1.8 V @ IC = 40 A), high input impedance, and fast switching. The device is Pb-Free and RoHS Compliant.
Product Attributes
- Brand: ON Semiconductor
- Certifications: Pb-Free, RoHS Compliant
Technical Specifications
| Symbol | Description | Ratings | Unit |
| ABSOLUTE MAXIMUM RATINGS | |||
| VCES | Collector to Emitter Voltage | 600 | V |
| VGES | Gate to Emitter Voltage | ±20 | V |
| Transient Gate-to-Emitter Voltage | ±30 | V | |
| IC | Collector Current (TC = 25°C) | 80 | A |
| Collector Current (TC = 100°C) | 40 | A | |
| ICM (Note 1) | Pulsed Collector Current (TC = 25°C) | 120 | A |
| PD | Maximum Power Dissipation (TC = 25°C) | 290 | W |
| Maximum Power Dissipation (TC = 100°C) | 116 | W | |
| TJ | Operating Junction Temperature | -55 to +150 | °C |
| TSTG | Storage Temperature Range | -55 to +150 | °C |
| TL | Maximum Lead Temp. for Soldering Purposes, 1/8 from Case for 5 Seconds | 300 | °C |
| THERMAL CHARACTERISTICS | |||
| RJC (IGBT) | Thermal Resistance, Junction to Case | - | 0.43 °C/W |
| RJC (Diode) | Thermal Resistance, Junction to Case | - | 1.45 °C/W |
| RJA | Thermal Resistance, Junction to Ambient | - | 40 °C/W |
| ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) | |||
| BVCES | Collector to Emitter Breakdown Voltage (VGE = 0 V, IC = 250 µA) | 600 | V |
| BVCES / ΔTJ | Temperature Coefficient of Breakdown Voltage (VGE = 0 V, IC = 250 µA) | - 0.6 | V/°C |
| ICES | Collector Cut-Off Current (VCE = VCES, VGE = 0 V) | - | 250 µA |
| IGES | G-E Leakage Current (VGE = VGES, VCE = 0 V) | - | ±400 nA |
| VGE(th) | G-E Threshold Voltage (IC = 250 µA, VCE = VGE) | 4.0 - 6.5 | V |
| VCE(sat) | Collector to Emitter Saturation Voltage (IC = 40 A, VGE = 15 V) | - 2.4 | V |
| Collector to Emitter Saturation Voltage (IC = 40 A, VGE = 15 V, TC = 125°C) | - 2.0 | V | |
| DYNAMIC CHARACTERISTICS | |||
| Cies | Input Capacitance (VCE = 30 V, VGE = 0 V, f = 1 MHz) | - 2110 | pF |
| Coes | Output Capacitance | - 200 | pF |
| Cres | Reverse Transfer Capacitance | - 60 | pF |
| SWITCHING CHARACTERISTICS (TC = 25°C) | |||
| Eon | Turn-On Switching Loss | - 1.19 | mJ |
| Eoff | Turn-Off Switching Loss | - 0.46 | mJ |
| Ets | Total Switching Loss | - 1.65 | mJ |
| SWITCHING CHARACTERISTICS (TC = 125°C) | |||
| Eon | Turn-On Switching Loss | - 1.2 | mJ |
| Eoff | Turn-Off Switching Loss | - 0.69 | mJ |
| Ets | Total Switching Loss | - 1.89 | mJ |
| GATE CHARGE CHARACTERISTICS | |||
| Qg | Total Gate Charge (VCE = 400 V, IC = 40 A, VGE = 15 V) | - 120 | nC |
| Qge | Gate to Emitter Charge | - 14 | nC |
| Qgc | Gate to Collector Charge | - 58 | nC |
| ELECTRICAL CHARACTERISTICS OF THE DIODE (TC = 25°C unless otherwise noted) | |||
| VFM | Diode Forward Voltage (IF = 20 A, TC = 25°C) | - 2.6 | V |
| Diode Forward Voltage (IF = 20 A, TC = 125°C) | - 1.85 | V | |
| Trr | Diode Reverse Recovery Time (IF = 20 A, diF/dt = 200 A/µs, TC = 25°C) | - 45 | ns |
| Diode Reverse Recovery Time (IF = 20 A, diF/dt = 200 A/µs, TC = 125°C) | - 140 | ns | |
| Qrr | Diode Reverse Recovery Charge (TC = 25°C) | - 75 | nC |
| Diode Reverse Recovery Charge (TC = 125°C) | - 375 | nC | |
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