Low Saturation Voltage Ultra Fast IGBT onsemi SGH40N60UFDTU Ideal for Motor Control and Servo Systems

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Product Description

SGH40N60UFD Ultra-Fast IGBT

The Fairchild SGH40N60UFD is an Ultra-Fast Insulated Gate Bipolar Transistor (IGBT) designed for applications requiring high-speed switching. It offers low conduction and switching losses, making it suitable for motor control, general inverters, robotics, and servo controls. Key features include a low saturation voltage of 2.1V at 20A, high input impedance, and an integrated fast recovery diode (FRD) with a typical reverse recovery time (trr) of 42ns.

Product Attributes

Brand: Fairchild Semiconductor
Product Series: UFD
Package Type: TO-3P

Technical Specifications

Parameter	Test Conditions	Min.	Typ.	Max.	Units
Absolute Maximum Ratings
VCES	Collector-Emitter Voltage			600	V
VGES	Gate-Emitter Voltage			20	V
IC	Collector Current @ TC = 25C			40	A
IC	Collector Current @ TC = 100C			20	A
ICM	Pulsed Collector Current (1)			160	A
IF	Diode Continuous Forward Current @ TC = 100C			15	A
IFM	Diode Maximum Forward Current			160	A
PD	Maximum Power Dissipation @ TC = 25C			160	W
PD	Maximum Power Dissipation @ TC = 100C			64	W
TJ	Operating Junction Temperature	-55		150	C
Tstg	Storage Temperature Range	-55		150	C
TL	Maximum Lead Temp. for Soldering Purposes, 1/8 from Case for 5 Seconds			300	C
Thermal Characteristics
RJC(IGBT)	Thermal Resistance, Junction-to-Case		--	0.77	C/W
RJC(DIODE)	Thermal Resistance, Junction-to-Case		--	1.7	C/W
RJA	Thermal Resistance, Junction-to-Ambient		--	40	C/W
Electrical Characteristics (IGBT)
BVCES	Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 250uA)	600	--	--	V
BVCES/TJ	Temperature Coefficient of Breakdown Voltage (VGE = 0V, IC = 1mA)		0.6	--	V/C
ICES	Collector Cut-Off Current (VCE = VCES, VGE = 0V)		--	250	uA
IGES	G-E Leakage Current (VGE = VGES, VCE = 0V)		--	100	nA
VGE(th)	G-E Threshold Voltage (IC = 20mA, VCE = VGE)	3.5	4.5	6.5	V
VCE(sat)	Collector to Emitter Saturation Voltage (IC = 20A, VGE = 15V)		2.1	2.6	V
VCE(sat)	Collector to Emitter Saturation Voltage (IC = 40A, VGE = 15V)		2.6	--	V
Cies	Input Capacitance (VCE = 30V, VGE = 0V, f = 1MHz)		1430	--	pF
Coes	Output Capacitance		170	--	pF
Cres	Reverse Transfer Capacitance		50	--	pF
td(on)	Turn-On Delay Time (VCC = 300 V, IC = 20A, RG = 10, VGE = 15V, Inductive Load, TC = 25C)		15	--	ns
tr	Rise Time		30	--	ns
td(off)	Turn-Off Delay Time		65	130	ns
tf	Fall Time		50	150	ns
Eon	Turn-On Switching Loss		160	--	uJ
Eoff	Turn-Off Switching Loss		200	--	uJ
Ets	Total Switching Loss		360	600	uJ
td(on)	Turn-On Delay Time (VCC = 300 V, IC = 20A, RG = 10, VGE = 15V, Inductive Load, TC = 125C)		30	--	ns
tr	Rise Time		37	--	ns
td(off)	Turn-Off Delay Time		110	200	ns
tf	Fall Time		144	250	ns
Eon	Turn-On Switching Loss		310	--	uJ
Eoff	Turn-Off Switching Loss		430	--	uJ
Ets	Total Switching Loss		740	1200	uJ
Qg	Total Gate Charge (VCE = 300 V, IC = 20A, VGE = 15V)		97	150	nC
Qge	Gate-Emitter Charge		20	30	nC
Qgc	Gate-Collector Charge		25	40	nC
Le	Internal Emitter Inductance (Measured 5mm from PKG)		14	--	nH
Electrical Characteristics (DIODE)
VFM	Diode Forward Voltage (IF = 15A, TC = 25C)		1.4	1.7	V
VFM	Diode Forward Voltage (IF = 15A, TC = 100C)		1.3	--	V
trr	Diode Reverse Recovery Time (IF = 15A, di/dt = 200A/us, TC = 25C)		42	60	ns
trr	Diode Reverse Recovery Time (IF = 15A, di/dt = 200A/us, TC = 100C)		74	--	ns
Irr	Diode Peak Reverse Recovery Current (TC = 25C)		4.5	6.0	A
Irr	Diode Peak Reverse Recovery Current (TC = 100C)		6.5	--	A
Qrr	Diode Reverse Recovery Charge (TC = 25C)		80	180	nC
Qrr	Diode Reverse Recovery Charge (TC = 100C)		220	--	nC