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Low Voltage N Channel MOSFET OSEN OSD50N03T Ideal for Synchronous Rectification and Power Conversion

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Product Description

Product Overview

The OSD50N03T is a Low Voltage N-channel MOSFET designed for applications requiring fast switching speeds, low gate charge, and high power/current handling capabilities. It is RoHS compliant and suitable for DC to DC converters and synchronous rectification.

Product Attributes

  • Brand: OSEN
  • Publication Order Number: OSD50N03T
  • Revision: 21.2.10
  • Certifications: RoHS compliant

Technical Specifications

ParametersUnitConditionsMinTypMax
Absolute Maximum Ratings
Drain-Source Voltage (VDSS)V30
Gate-Source Voltage-Continuous (VGS)V±20
Drain Current-Continuous (ID) (Note 2)A50
Drain Current-Single Pulsed (IDM) (Note 1)A200
Power Dissipation (PD) (Note 2)W60
Max.Operating junction temperature (Tj)150
Electrical Characteristics
Drain-Source Breakdown Voltage (BVDSS) (Note 1)VID=250µA, VGS=0V30----
Gate Threshold Voltage (VGS(th))VVDS=VGS, ID=250µA1.01.52.5
Drain-Source On-Resistance (RDS(on))VGS=10V, ID=20A--6.0--
Gate-Body Leakage Current (IGSS)nAVGS=±20V, VDS=0----±100
Zero Gate Voltage Drain Current (IDSS)µAVDS=30V, VGS=0----1
Forward Transconductance (gfs)SVDS=5V, ID=10A--12--
Switching Characteristics
Turn-On Delay Time (td(on))nsVGS=4.5V, VDS=25V,ID=20A, RG=1Ω--8.5--
Rise Time (tr)ns--28--
Turn-Off Delay Time (td(off))ns--25--
Fall Time (tf)ns--11--
Total Gate Charge (Qg)nCVDS=20, VGS=4.5V, ID=20A--20--
Gate-Source Charge (Qgs)nC--2.5--
Gate-Drain Charge (Qgd)nC--10--
Dynamic Characteristics
Input Capacitance (Ciss)pFVDS=25V, VGS=0, f=1MHz--855--
Output Capacitance (Coss)pF--315--
Reverse Transfer Capacitance (Crss)pF--125--
Diode Forward Current-Continuous (IS) (Note 2)A----50
Diode Forward On-Voltage (VSD)VIS=20A, VGS=0----1.2
Thermal Resistance, Junction to Case (Rth(j-c))/W----2.08

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
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