100V Drain Source Voltage MOSFET PJSEMI PJM10H02NSC for Uninterruptible Power Supplies and Switching
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The PJM10H02NSC is an N-Channel Enhancement Mode Power MOSFET featuring advanced trench technology. It is designed for power switching applications and uninterruptible power supplies. This RoHS and Reach compliant component is halogen and antimony free, offering a VDS of 100V and an ID of 2A, with a low RDS(on) of less than 240m at VGS=10V.
Product Attributes
- Brand: PingJingSemi
- Certifications: RoHS and Reach Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain Current-Continuous | ID | 2 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 5 | A | ||
| Maximum Power Dissipation | PD | 1.0 | W | |||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | TSTG | -55 | +150 | C | ||
| Thermal Resistance,Junction-to-Ambient | RJA | Note2 | 125 | C/W | ||
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 100 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=100V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | Note3, VDS=VGS,ID=250A | 1.2 | 1.8 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=10V,ID=1A | -- | 210 | 240 | m |
| Forward Transconductance | gFS | Note3, VDS=5V,ID=1A | 1 | -- | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=50V,VGS=0V,f=1MHz | -- | 190 | -- | pF |
| Output Capacitance | Coss | VDS=50V,VGS=0V,f=1MHz | -- | 22 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=50V,VGS=0V,f=1MHz | -- | 13 | -- | pF |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=50V,ID=1.3A,RL=39,VGS=10V,RGEN=1 | -- | 6 | -- | nS |
| Turn-on Rise Time | tr | VDD=50V,ID=1.3A,RL=39,VGS=10V,RGEN=1 | -- | 10 | -- | nS |
| Turn-off Delay Time | td(off) | VDD=50V,ID=1.3A,RL=39,VGS=10V,RGEN=1 | -- | 10 | -- | nS |
| Turn-off Fall Time | tf | VDD=50V,ID=1.3A,RL=39,VGS=10V,RGEN=1 | -- | 6 | -- | nS |
| Total Gate Charge | ||||||
| Total Gate Charge | Qg | VDS=50V,ID=1.3A, VGS=10V | -- | 5.2 | -- | nC |
| Gate-Source Charge | Qgs | VDS=50V,ID=1.3A, VGS=10V | -- | 0.75 | -- | nC |
| Gate-Drain Charge | Qg d | VDS=50V,ID=1.3A, VGS=10V | -- | 1.4 | -- | nC |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | Note3, VGS=0V,IS=1.3A | -- | -- | 1.2 | V |
| Diode Forward Current | IS | Note2 | -- | -- | 2 | A |
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina