Dual N Channel Power MOSFET PJSEMI PJM8205JDNSG S Featuring Halogen Free and Antimony Free Materials
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Product Description
Product Overview
The PJM8205JDNSG-S is a Dual N-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is designed for applications such as load switching, PWM applications, and power management. This device is RoHS and Reach compliant, and is halogen and antimony free.
Product Attributes
- Brand: PingJingSemi
- Certifications: RoHS and Reach Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Drain Current-Continuous | ID | 4 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 15 | A | ||
| Maximum Power Dissipation | PD | 1 | W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | +150 | °C | ||
| Thermal Resistance,Junction-to-Ambient | RθJA | Note2 | 125 | °C/W | ||
| Electrical Characteristics (Ta=25°C unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250μA | 20 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=20V,VGS=0V | -- | 1 | μA | |
| Gate-Body Leakage Current | IGSS | VGS=±12V,VDS=0V | -- | ±100 | nA | |
| Gate Threshold Voltage | VGS(th) | Note3,VDS=VGS,ID=250μA | 0.4 | 0.65 | 1 | V |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=4.5V,ID=4A | 23 | 30 | mΩ | |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=2.5V,ID=3A | 28 | 35 | mΩ | |
| Forward Transconductance | gFS | Note3,VDS=5V,ID=1A | 7 | -- | S | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=10V,VGS=0V,f=1MHz | 340 | -- | pF | |
| Output Capacitance | Coss | VDS=10V,VGS=0V,f=1MHz | 82 | -- | pF | |
| Reverse Transfer Capacitance | Crss | VDS=10V,VGS=0V,f=1MHz | 56 | -- | pF | |
| Gate Resistance | RG | VDS=0V,VGS=0V,f=1MHz | 25 | -- | Ω | |
| Total Gate Charge | Qg | VDS=10V,ID=3A, VGS=0V~4.5V | 5.2 | -- | nC | |
| Gate-Source Charge | Qgs | VDS=10V,ID=3A, VGS=0V~4.5V | 0.9 | -- | nC | |
| Gate-Drain Charge | Qgd | VDS=10V,ID=3A, VGS=0V~4.5V | 1.1 | -- | nC | |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=10V, ID=3A, VGS=4V,RGEN=3Ω | 4 | -- | nS | |
| Turn-on Rise Time | tr | VDD=10V, ID=3A, VGS=4V,RGEN=3Ω | 28 | -- | nS | |
| Turn-off Delay Time | td(off) | VDD=10V, ID=3A, VGS=4V,RGEN=3Ω | 66 | -- | nS | |
| Turn-off Fall Time | tf | VDD=10V, ID=3A, VGS=4V,RGEN=3Ω | 50 | -- | nS | |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | Note3,VGS=0V,IS=4A | -- | 1.2 | V | |
| Diode Forward Current | IS | Note2 | -- | 4 | A | |
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Sellina