450V N CHANNEL Power MOSFET OSEN IRF740PBF Featuring Improved dv dt Capability and Low On Resistance

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Product Description

Product Overview

The IRF740PBF is a 450V N-CHANNEL MOSFET from OSEN, designed for high-efficiency applications. It features fast switching speed, high input impedance, low level drive, and improved dv/dt capability with high ruggedness. This MOSFET is suitable for use in high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.

Product Attributes

Brand: OSEN
Model: IRF740PBF
Package: TO-220AB

Technical Specifications

Parameters	Unit	Ratings	Conditions
Drain-Source Voltage (VDSS)	V	450
Gate-Source Voltage-Continuous (VGS)	V	30
Drain Current-Continuous (ID) (Note 2)	A	11	Tc=25C
Drain Current-Single Pulsed (IDM) (Note 1)	A	44
Power Dissipation (PD) (Note 2)	W	100	Tc=25C
Max.Operating junction temperature (Tj)		150
Drain-Source Breakdown Voltage Current (BVDSS) (Note 1)	V	450	ID=250A VGS=0VTJ=25C
Gate Threshold Voltage (VGS(th))	V	2.0 -- 4.0	VDS=VGSID=250A
Drain-Source On-Resistance (RDS(on))		-- 0.44 --	VGS=10VID=5A
Gate-Body Leakage Current (IGSS)	nA	-- -- 100	VGS=30VVDS=0
Zero Gate Voltage Drain Current (IDSS)	A	-- -- 1	VDS=400VVGS=0
Forward Transconductance (gfs)	S	5.8 -- --	VDS=15VID=5A
Turn-On Delay Time (Td(on))	ns	-- 17 --	VDS=250VID=11A RG=25Note 2
Rise Time (Tr)	ns	-- 10 --
Turn-Off Delay Time (Td(off))	ns	-- 10 --
Fall Time (Tf)	ns	-- 10 --
Total Gate Charge (Qg)	nC	-- 35 50	VDS=400V VGS=10V ID=11ANote 2
Gate-Source Charge (Qgs)	nC	-- 11 --
Gate-Drain Charge (Qgd)	nC	-- 12 --
Input Capacitance (Ciss)	pF	-- 1100 --	VDS=25VVGS=0 f=1MHz
Output Capacitance (Coss)	pF	-- 220 --
Reverse Transfer Capacitance (Crss)	pF	-- 27 --
Continuous Drain-Source Diode Forward Current (IS) (Note 2)	A	-- -- 11
Diode Forward On-Voltage (VSD)	V	-- -- 1.4	IS=5AVGS=0
Thermal Resistance, Junction to Case (Rth(j-c))	/W	-- -- 1.25