switching OSEN OSPF12N70 700V N channel MOSFET ideal for electronic lamp ballasts and power supplies
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Product Description
OSPF12N70 700V N-CHANNEL MOSFET
The OSPF12N70 is a 700V N-CHANNEL MOSFET designed for high-efficiency applications. It features fast switching speeds, high input impedance with low-level drive, and tested avalanche energy. Its improved dv/dt capability and high ruggedness make it suitable for demanding power supply designs. Key applications include high-efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.
Product Attributes
- Brand: OSEN
- Origin: China
Technical Specifications
| Parameters | Unit | Conditions | Min | Typ | Max |
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage | V | 700 | |||
| Gate-Source Voltage-Continuous | V | ±30 | |||
| Drain Current-Continuous (Note 2) | A | 12 | |||
| Drain Current-Single Pulsed (Note 1) | A | 48 | |||
| Power Dissipation (Note 2) | W | 52 | |||
| Max.Operating junction temperature | 150 | ||||
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (Note 1) | V | ID=250µA, VGS=0V, TJ=25°C | 700 | ||
| Gate Threshold Voltage | V | VDS=VGS, ID=250µA | 2.0 | 4.0 | |
| Drain-Source On-Resistance | Ω | VGS=10V, ID=5.5A | 0.810 | 0.860 | |
| Gate-Body Leakage Current | nA | VGS=±30V, VDS=0 | ±100 | ||
| Zero Gate Voltage Drain Current | µA | VDS=700V, VGS=0 | 1 | ||
| Switching Characteristics | |||||
| Turn-On Delay Time | ns | VDS=350V, ID=5A, RG=25Ω (Note 2) | 30 | 70 | |
| Rise Time | ns | 130 | 240 | ||
| Turn-Off Delay Time | ns | 100 | 200 | ||
| Fall Time | ns | 90 | 180 | ||
| Total Gate Charge | nC | VDS=640V, VGS=10V, ID=5A (Note 2) | 42 | 54 | |
| Gate-Source Charge | nC | 8.5 | |||
| Gate-Drain Charge | nC | 21 | |||
| Dynamic Characteristics | |||||
| Input Capacitance | pF | VDS=25V, VGS=0, f=1MHz | 1500 | 1900 | |
| Output Capacitance | pF | 280 | 320 | ||
| Reverse Transfer Capacitance | pF | 30 | 40 | ||
| Diode Forward Current (Note 2) | A | 12 | |||
| Diode Forward On-Voltage | V | IS=5A, VGS=0 | 1.4 | ||
| Thermal Resistance, Junction to Case | °C/W | 2.4 | |||
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Sellina