power dissipation and switching controllability in onsemi FGY100T120RWD for demanding industrial uses
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Product Description
Product Description
Utilizing the novel field stop 7th generation IGBT technology and the Gen7 Diode in a TO247 3-lead package, the FGY100T120RWD offers optimal performance with low conduction losses and good switching controllability for high-efficiency operation in various applications. Its advantages include low conduction loss, optimized switching, high current capability, and suitability for parallel operation due to a positive temperature coefficient. It is designed for demanding applications such as motor control, UPS, data center power supplies, and high-power switching.
Product Attributes
- Brand: onsemi
- Certifications: RoHS Compliant
- Package: TO247-3LD
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
| MAXIMUM RATINGS | ||||
| Collector-to-Emitter Voltage | VCES | 1200 | V | |
| Gate-to-Emitter Voltage | VGES | 20 | Transient 30 V | |
| Collector Current | IC | 100 | A | TC = 100C |
| Power Dissipation | PD | 535 | W | TC = 100C |
| Pulsed Collector Current | ICM | 300 | A | TC = 25C, tp = 10 s |
| Diode Forward Current | IF | 100 | A | TC = 100C |
| Pulsed Diode Forward Current | IFM | 300 | A | TC = 25C, tp = 10 s |
| Short Circuit Withstand Time | tSC | 5 | s | VGE = 15 V, VCC = 600 V, TC = 150C |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 to 175 | C | |
| Lead Temperature for Soldering Purposes | TL | 260 | C | |
| THERMAL CHARACTERISTICS | ||||
| Thermal Resistance, Junction-to-Case for IGBT | R JC | 0.14 | C/W | |
| Thermal Resistance, Junction-to-Case for Diode | 0.23 | C/W | ||
| Thermal Resistance, Junction-to-Ambient | R JA | 40 | C/W | |
| ELECTRICAL CHARACTERISTICS OF THE IGBT | ||||
| Collector-to-Emitter Breakdown Voltage | BVCES | 1200 | V | VGE = 0 V, IC = 5 mA |
| Collector-to-Emitter Cut-Off Current | ICES | 40 | A | VGE = 0 V, VCE = VCES |
| Gate-to-Emitter Leakage Current | IGES | 400 | nA | VGE = 20 V, VCE = 0 V |
| Gate-to-Emitter Threshold Voltage | VGE(TH) | 5.92 | V | VGE = VCE, IC = 100 mA (Typ) |
| Collector-to-Emitter Saturation Voltage | VCE(SAT) | 1.43 | V | VGE = 15 V, IC = 100 A, TJ = 25C (Typ) |
| Collector-to-Emitter Saturation Voltage | VCE(SAT) | 1.66 | V | VGE = 15 V, IC = 100 A, TJ = 175C (Typ) |
| Input Capacitance | Cies | 12200 | pF | VCE = 30 V, VGE = 0 V, f = 1 MHz (Typ) |
| Output Capacitance | Coes | 392 | pF | (Typ) |
| Reverse Transfer Capacitance | Cres | 44.2 | pF | (Typ) |
| Total Gate Charge | Qg | 427 | nC | VCE = 600 V, VGE = 15 V, IC = 100 A (Typ) |
| SWITCHING CHARACTERISTIC, INDUCTIVE LOAD (IGBT) | ||||
| Turn-On Delay Time | td(on) | 74 | ns | VCE = 600 V, VGE = 15 V, IC = 50 A, RG = 4.7 , TJ = 25C (Typ) |
| Turn-Off Delay Time | td(off) | 464 | ns | VCE = 600 V, VGE = 15 V, IC = 50 A, RG = 4.7 , TJ = 25C (Typ) |
| Rise Time | tr | 45 | ns | VCE = 600 V, VGE = 15 V, IC = 50 A, RG = 4.7 , TJ = 25C (Typ) |
| Fall Time | tf | 196 | ns | VCE = 600 V, VGE = 15 V, IC = 50 A, RG = 4.7 , TJ = 25C (Typ) |
| Turn-On Switching Loss | Eon | 3.43 | mJ | VCE = 600 V, VGE = 15 V, IC = 50 A, RG = 4.7 , TJ = 25C (Typ) |
| Turn-Off Switching Loss | Eoff | 4.54 | mJ | VCE = 600 V, VGE = 15 V, IC = 50 A, RG = 4.7 , TJ = 25C (Typ) |
| Total Switching Loss | Ets | 7.97 | mJ | VCE = 600 V, VGE = 15 V, IC = 50 A, RG = 4.7 , TJ = 25C (Typ) |
| DIODE CHARACTERISTIC | ||||
| Diode Forward Voltage | VF | 1.80 | V | IF = 100 A, TJ = 25C (Typ) |
| Diode Forward Voltage | VF | 1.90 | V | IF = 100 A, TJ = 175C (Typ) |
| DIODE SWITCHING CHARACTERISTIC, INDUCTIVE LOAD | ||||
| Reverse Recovery Time | trr | 256 | ns | VR = 600 V, IF = 50 A, dIF/dt = 500 A/s, TJ = 25C (Typ) |
| Reverse Recovery Charge | Qrr | 3140 | nC | VR = 600 V, IF = 50 A, dIF/dt = 500 A/s, TJ = 25C (Typ) |
| Reverse Recovery Energy | Erec | 1 | mJ | VR = 600 V, IF = 50 A, dIF/dt = 500 A/s, TJ = 25C (Typ) |
| Peak Reverse Recovery Current | IRRM | 24.5 | A | VR = 600 V, IF = 50 A, dIF/dt = 500 A/s, TJ = 25C (Typ) |
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Sellina