P Channel Enhancement Mode MOSFET PJSEMI PJM09P30DF Ideal for Load Switching and PWM Power Control
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The PJM09P30DF is a P-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is designed for load switching, PWM applications, and power management. This RoHS and Reach compliant, Halogen and Antimony Free component offers low on-resistance and is suitable for various power management scenarios.
Product Attributes
- Brand: Pingjingsemi
- Certifications: RoHS and Reach Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 1
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | -VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain Current-Continuous | -ID | 9 | A | |||
| Drain Current-Pulsed | -IDM | Note1 | 50 | A | ||
| Single Pulsed Avalanche Energy | EAS | Note2 | 36 | mJ | ||
| Maximum Power Dissipation | PD | 2 | W | |||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | TSTG | -55 | +150 | C | ||
| Thermal Resistance,Junction-to-Ambient | RJA | 62.5 | C/W | |||
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | -V(BR)DSS | VGS=0V,ID=-250A | 30 | -- | -- | V |
| Zero Gate Voltage Drain Current | -IDSS | VDS=-30V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | -VGS(th) | Note3, VDS=VGS,ID=-250A | 1.0 | -- | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=-10V,ID=-6.5A | -- | 19 | 25 | m |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=-4.5V,ID=-5A | -- | 28 | 45 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V,VGS=0V,f=1MHz | -- | 1030 | -- | pF |
| Output Capacitance | Coss | VDS=-15V,VGS=0V,f=1MHz | -- | 155 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=-15V,VGS=0V,f=1MHz | -- | 132 | -- | pF |
| Total Gate Charge | Qg | VDS=-15V,ID=-8A, VGS=-10V | -- | 52 | -- | nC |
| Gate-Source Charge | Qgs | VDS=-15V,ID=-8A, VGS=-10V | -- | 9.8 | -- | nC |
| Gate-Drain Charge | Qg | VDS=-15V,ID=-8A, VGS=-10V | -- | 8.3 | -- | nC |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=-15V, ID=-1A, VGS=-10V, RGEN=6 | -- | 13 | -- | nS |
| Turn-on Rise Time | tr | VDD=-15V, ID=-1A, VGS=-10V, RGEN=6 | -- | 15 | -- | nS |
| Turn-off Delay Time | td(off) | VDD=-15V, ID=-1A, VGS=-10V, RGEN=6 | -- | 198 | -- | nS |
| Turn-off Fall Time | tf | VDD=-15V, ID=-1A, VGS=-10V, RGEN=6 | -- | 98 | -- | nS |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | -VSD | Note3, VGS=0V,IS=-9A | -- | -- | 1.2 | V |
| Diode Forward Current | -IS | VGS=0V | -- | -- | 9 | A |
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
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Contact Person
Sellina