Switch mode power supplies using OSEN OSP65NF06 60V N channel MOSFET with low level drive capability

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Product Description

Product Overview

The OSEN OSP65NF06 is a 60V N-channel MOSFET designed for high-efficiency applications. It features fast switching speeds, high input impedance, low-level drive capability, and improved dv/dt performance with high ruggedness. This MOSFET is suitable for use in high-efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.

Product Attributes

Brand: OSEN
Publication Order Number: OSP65NF06
Revision: Rev 21.2.10
Package: TO-220

Technical Specifications

Symbol	Parameters	Ratings	Unit	Conditions
VDSS	Drain-Source Voltage	60	V
VGS	Gate-Source Voltage-Continuous	±20	V
ID	Drain Current-Continuous	65	A	(Note 2)
IDM	Drain Current-Single Plused	260	A	(Note 1)
PD	Power Dissipation	155	W	(Note 2)
Tj Max.	Operating junction temperature	150
BVDSS	Drain-Source Breakdown Voltage	60	V	ID=250µA, VGS=0V, TJ=25°C
VGS(th)	Gate Threshold Voltage	2.0 - 4.0	V	VDS=VGS, ID=250µA
RDS(on)	Drain-Source On-Resistance	-- 15 --	mΩ	VGS=10V, ID=30A
IGSS	Gate-Body Leakage Current	-- ±100	nA	VGS=±20V, VDS=0
IDSS	Zero Gate Voltage Drain Current	-- 1	µA	VDS=6V, VGS=0
gfs	Forward Transconductance	-- 50 --	S	VDS=15V, ID=30A
Td(on)	Turn-On Delay Time	-- 15 --	ns	VDD=30V, ID=30A, RG=4.7Ω (Note 2)
Tr	Rise Time	-- 60 --	ns
Td(off)	Turn-Off Delay Time	-- 40 --	ns
Tf	Fall Time	-- 16 --	ns
Qg	Total Gate Charge	-- 54 - 75	nC	VDD=30, VGS=10V, ID=65A (Note 2)
Qgs	Gate-Source Charge	-- 10 --	nC
Qgd	Gate-Drain Charge	-- 20 --	nC
Ciss	Input Capacitance	-- 1700 --	pF	VDS=25V, VGS=0, f=1MHz
Coss	Output Capacitance	-- 400 --	pF
Crss	Reverse Transfer Capacitance	-- 135 --	pF
IS	Continuous Drain-Source Diode Forward Current	-- 65	A	(Note 2)
VSD	Diode Forward On-Voltage	-- 1.5	V	IS=65A, VGS=0
Rth(j-c)	Thermal Resistance, Junction to Case	-- 0.81	°C/W