P Channel Enhancement Mode MOSFET PJSEMI PJM3415PDFA Featuring Low RDSon and ESD Protection up to 2KV
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Product Description
PJM3415PDFA P-Channel Enhancement Mode Power MOSFET
The PJM3415PDFA is a P-Channel Enhancement Mode Power MOSFET designed for efficient power management. It features low gate charge and low RDS(on), along with ESD protection up to 2KV (HBM). This MOSFET is suitable for applications such as PWM, load switching, and general power management, offering a VDS of -20V and an ID of -4A with RDS(on)
Product Attributes
- Brand: Pingjingsemi
- Model: PJM3415PDFA
- Package: DFN2x2A-6L
- Marking Code: 3415
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | -VDS | 20 | V | |||
| Gate-Source Voltage | VGS | 8 | V | |||
| Drain Current-Continuous | -ID | 4 | A | |||
| Maximum Power Dissipation | PD | 1.2 | W | |||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | TSTG | -55 | +150 | C | ||
| Thermal Resistance,Junction-to-Ambient | RJA | Note1 | 104 | C/W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | -V(BR)DSS | VGS=0V,ID=-250A | 20 | -- | -- | V |
| Zero Gate Voltage Drain Current | -IDSS | VDS=-20V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=8V,VDS=0V | -- | -- | 10 | A |
| Gate Threshold Voltage | -VGS(th) | VDS=VGS,ID=-250A | 0.3 | 0.65 | 1 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=-4.5V,ID=-4A | -- | 33 | 50 | m |
| Drain-Source On-Resistance | RDS(on) | VGS=-2.5V,ID=-4A | -- | 42 | 60 | m |
| Forward Transconductance | gFS | VDS=-5V,ID=-4A | 8 | -- | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-10V,VGS=0V,f=1MHz | -- | 1181.1 | -- | pF |
| Output Capacitance | Coss | -- | 121.3 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 114.8 | -- | pF | |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=-10V,RL=2.5, VGS=-4.5V,RG=3 | -- | 12 | -- | nS |
| Turn-on Rise Time | tr | -- | 10 | -- | nS | |
| Turn-off Delay Time | td(off) | -- | 19 | -- | nS | |
| Turn-off Fall Time | tf | -- | 25 | -- | nS | |
| Total Gate Charge | ||||||
| Total Gate Charge | Qg | VDS=-10V, ID= -4A,VGS=-4.5V | -- | 10.2 | -- | nC |
| Gate-Source Charge | Qgs | -- | 1.3 | -- | nC | |
| Gate-Drain Charge | Qg | -- | 2.4 | -- | nC | |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | -VSD | VGS=0V,IS=-4A | -- | -- | 1.2 | V |
| Diode Forward Current | -IS | Note1 | -- | -- | 4 | A |
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