High Voltage MOSFET OSEN OSPF16N65 650V N Channel Device for Electronic Ballasts and Power Supplies
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Product Description
OSPF16N65 650V N-CHANNEL MOSFET
The OSPF16N65 is a 650V N-CHANNEL MOSFET designed for high-efficiency applications. It features fast switching speeds, high input impedance with low-level drive, and tested avalanche energy. Its improved dv/dt capability and high ruggedness make it suitable for demanding power supply designs. Key applications include high-efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.
Product Attributes
- Brand: OSEN
- Publication Order Number: OSPF16N65
- Revision: Rev 21.2.10
Technical Specifications
| Symbol | Parameters | Ratings | Unit | Conditions |
| VDSS | Drain-Source Voltage | 650 | V | |
| VGS | Gate-Source Voltage-Continuous | 30 | V | |
| ID | Drain Current-ContinuousNote 2 | 16 | A | |
| IDM | Drain Current-Single PlusedNote 1 | 64 | A | |
| PD | Power Dissipation Note 2 | 62 | W | |
| Tj Max. | Operating junction temperature | 150 | ||
| BVDSS | Drain-Source Breakdown Voltage Current Note 1 | 650 | V | ID=250A VGS=0VTJ=25C |
| VGS(th) | Gate Threshold Voltage | 2.0 -- 4.0 | V | VDS=VGSID=250A |
| RDS(on) | Drain-Source On-Resistance | -- 0.52 | VGS=10VID=8A | |
| IGSS | Gate-Body Leakage Current | -- 90 | nA | VGS=30VVDS=0 |
| IDSS | Zero Gate Voltage Drain Current | -- 200 | nA | VDS=650VVGS=0 |
| gfs | Forward Transconductance | -- 6.0 | S | VDS=30VID=8A |
| Td(on) | Turn-On Delay Time | -- 16 | ns | VDS=325VID=16A RG=25Note 2 |
| Tr | Rise Time | -- 45 | ns | |
| Td(off) | Turn-Off Delay Time | -- 85 | ns | |
| Tf | Fall Time | -- 18 | ns | |
| Qg | Total Gate Charge | -- 55 | nC | VDS=520V VGS=0-10V ID=16ANote 2 |
| Qgs | Gate-Source Charge | -- 15 | nC | |
| Qgd | Gate-Drain Charge | -- 21 | nC | |
| Ciss | Input Capacitance | -- 2800 | pF | VDS=25VVGS=0 f=1MHz |
| Coss | Output Capacitance | -- 380 | pF | |
| Crss | Reverse Transfer Capacitance | -- 20 | pF | |
| IS | Continuous Drain-Source Diode Forward CurrentNote 2 | -- 16 | A | |
| VSD | Diode Forward On-Voltage | -- 0.9 | V | IS=1AVGS=0 |
| Rth(j-c) | Thermal Resistance, Junction to Case | -- 2.02 | /W |
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Sellina