700V Power MOSFET OSEN OSPF70R550 Designed for Switch Mode Power Supplies and Power Factor Correction

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Product Description

Product Overview

The OSPF70R550 is a 700V Super-Junction Power MOSFET designed for high-efficiency applications. It features very low FOM RDS(on), 100% avalanche tested, and improved dv/dt capability for high ruggedness. This MOSFET is suitable for high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.

Product Attributes

Brand: OSEN
Publication Order Number: OSPF70R550
Certifications: RoHS compliant

Technical Specifications

Symbol	Parameters	Ratings	Unit	Conditions
Absolute Maximum Ratings
VDSS	Drain-Source Voltage	700	V
VGS	Gate-Source Voltage-Continuous	±30	V
ID	Drain Current-Continuous (Note 2)	7	A
IDM	Drain Current-Single Plused (Note 1)	21	A
PD	Power Dissipation (Note 2)	28	W
Tj Max.	Operating junction temperature	150
Static Characteristics
BVDSS	Drain-Source Breakdown VoltageCurrent (Note 1)	700	V	ID=250µA, VGS=0V, TJ=25°C
VGS(th)	Gate Threshold Voltage	2.5 - 4.5	V	VDS=VGS, ID=250µA
RDS(on)	Drain-Source On-Resistance	0.55	Ω	VGS=10V, ID=3.5A
IGSS	Gate-Body Leakage Current	±100	nA	VGS=±30V, VDS=0
IDSS	Zero Gate Voltage Drain Current	1	µA	VDS=700V, VGS=0
Switching Characteristics
Td(on)	Turn-On Delay Time	8.5	ns	VDS=300V,ID=3.7A, RG=25Ω
Tr	Rise Time	4.5	ns
Td(off)	Turn-Off Delay Time	45	ns
Tf	Fall Time	7.0	ns
Qg	Total Gate Charge	15 - 25	nC	VDS=450V,VGS=10V, ID=3.5A
Qgs	Gate-Source Charge	4.0	nC
Qgd	Gate-Drain Charge	6.5	nC
Dynamic Characteristics
Ciss	Input Capacitance	750	pF	VDS=25V, VGS=0, f=1MHz
Coss	Output Capacitance	75	pF
Crss	Reverse Transfer Capacitance	5.0	pF
IS	Continuous Drain-Source Diode Forward Current	7	A
VSD	Diode Forward On-Voltage	1.4	V	IS=7A, VGS=0
Rth(j-c)	Thermal Resistance, Junction to Case	4.2	°C/W