650V N channel MOSFET OSEN OSPF22N65C designed for power factor correction and switch mode power supplies
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Product Description
Product Overview
The OSPF22N65C is a 650V N-channel MOSFET designed for high-efficiency applications. It features fast switching speeds, high input impedance, low-level drive capability, and improved dv/dt performance with high ruggedness. This MOSFET is ideal for use in high-efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.
Product Attributes
- Brand: OSEN
- Model: OSPF22N65C
- Package: TO-220F
Technical Specifications
| Parameters | Unit | Conditions | Min | Typ | Max | |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage (VDSS) | V | 650 | ||||
| Gate-Source Voltage-Continuous (VGS) | V | ±30 | ||||
| Drain Current-Continuous (ID) (Note 2) | A | 22 | ||||
| Drain Current-Single Pulsed (IDM) (Note 1) | A | 88 | ||||
| Power Dissipation (PD) (Note 2) | W | 68 | ||||
| Max.Operating junction temperature (Tj) | 150 | |||||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage (BVDSS) (Note 1) | V | ID=250µA, VGS=0V, TJ=25°C | 650 | |||
| Gate Threshold Voltage (VGS(th)) | V | VDS=VGS, ID=250µA | 2.0 | 4.0 | ||
| Drain-Source On-Resistance (RDS(on)) | Ω | VGS=10V, ID=10A | 0.32 | |||
| Gate-Body Leakage Current (IGSS) | nA | VGS=±30V, VDS=0 | ±100 | |||
| Zero Gate Voltage Drain Current (IDSS) | µA | VDS=650V, VGS=0 | 1 | |||
| Forward Transconductance (gfs) | S | VDS=30V, ID=10A | 12.5 | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time (Td(on)) | ns | VDS=325V, ID=18A, RG=25Ω(Note 2) | 62 | |||
| Rise Time (Tr) | ns | 135 | ||||
| Turn-Off Delay Time (Td(off)) | ns | 210 | ||||
| Fall Time (Tf) | ns | 65 | ||||
| Total Gate Charge (Qg) | nC | VDS=480V, VGS=10V, ID=20A(Note 2) | 75 | |||
| Gate-Source Charge (Qgs) | nC | 19 | ||||
| Gate-Drain Charge (Qgd) | nC | 35 | ||||
| Dynamic Characteristics | ||||||
| Input Capacitance (Ciss) | pF | VDS=25V, VGS=0, f=1MHz | 3500 | |||
| Output Capacitance (Coss) | pF | 1250 | ||||
| Reverse Transfer Capacitance (Crss) | pF | 95 | ||||
| Continuous Drain-Source Diode Forward Current (IS) (Note 2) | A | 22 | ||||
| Diode Forward On-Voltage (VSD) | V | IS=12A, VGS=0 | 1.4 | |||
| Thermal Resistance, Junction to Case (Rth(j-c)) | °C/W | 1.8 | ||||
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