Power MOSFET OSEN OSPH12N65 650V N channel with improved dv dt ruggedness and high input impedance
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Product Description
OSEN OSPH12N65 650V N-CHANNEL MOSFET
The OSEN OSPH12N65 is a 650V N-channel MOSFET designed for high-efficiency applications. It features fast switching speeds, high input impedance, low-level drive capability, and improved dv/dt capability for enhanced ruggedness. This MOSFET is suitable for use in high-efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.
Product Attributes
- Brand: OSEN
- Origin: http://www.osen.net.cn
Technical Specifications
| Symbol | Parameters | Ratings | Unit | Conditions |
| VDSS | Drain-Source Voltage | 650 | V | |
| VGS | Gate-Source Voltage-Continuous | ±30 | V | |
| ID | Drain Current-Continuous | 12 | A | Note 2 |
| IDM | Drain Current-Single Plused | 48 | A | Note 1 |
| PD | Power Dissipation | 155 | W | Note 2 |
| Tj Max. | Operating junction temperature | 150 | ||
| BVDSS | Drain-Source Breakdown VoltageCurrent | 650 | V | ID=250µA, VGS=0V, TJ=25°C |
| VGS(th) | Gate Threshold Voltage | 2.0 - 4.0 | V | VDS=VGS, ID=250μA |
| RDS(on) | Drain-Source On-Resistance | 0.62 | Ω | VGS=10V, ID=6A |
| IGSS | Gate-Body Leakage Current | ±100 | nA | VGS=±30V, VDS=0 |
| IDSS | Zero Gate Voltage Drain Current | 1 | µA | VDS=650V, VGS=0 |
| gfs | Forward Transconductance | 12.5 | S | VDS=15V, ID=6A |
| Td(on) | Turn-On Delay Time | 18 | ns | VDS=325V, ID=12A, RG=25Ω(Note 2) |
| Tr | Rise Time | 20 | ns | |
| Td(off) | Turn-Off Delay Time | 45 | ns | |
| Tf | Fall Time | 25 | ns | |
| Qg | Total Gate Charge | 42 | nC | VDS=325, VGS=10V, ID=12A(Note 2) |
| Qgs | Gate-Source Charge | 8.5 | nC | |
| Qgd | Gate-Drain Charge | 21.5 | nC | |
| Ciss | Input Capacitance | 2100 | pF | VDS=25V, VGS=0, f=1MHz |
| Coss | Output Capacitance | 205 | pF | |
| Crss | Reverse Transfer Capacitance | 24.8 | pF | |
| IS | Continuous Drain-Source Diode Forward Current | 12 | A | Note 2 |
| VSD | Diode Forward On-Voltage | 1.4 | V | IS=12A, VGS=0 |
| Rth(j-c) | Thermal Resistance, Junction to Case | 0.81 | °C/W |
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