1200 Volt 5 Amp FS Trench IGBT onsemi FGD5T120SH featuring field stop technology and RoHS compliance
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Product Description
Product Overview
The FGD5T120SH is a 1200 V, 5 A FS Trench IGBT from ON Semiconductor, utilizing novel field stop IGBT technology. It offers optimum performance for inrush current limitation, lighting, and home appliance applications. Key advantages include FS Trench Technology with a positive temperature coefficient, high speed switching, low saturation voltage (VCE(sat) = 2.9 V @ IC = 5 A), 100% of parts tested for ILM, and high input impedance. This device is RoHS compliant.
Product Attributes
- Brand: ON Semiconductor (formerly Fairchild Semiconductor)
- Certifications: RoHS Compliant
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
| Off Characteristics | ||||||
| BVCES | Collector to Emitter Breakdown Voltage | VGE = 0 V, IC = 250 uA | 1200 | - | - | V |
| BVCES / TJ | Temperature Coefficient of Breakdown Voltage | VGE = 0 V, IC = 250 uA | - | 1.2 | - | V/oC |
| ICES | Collector Cut-Off Current | VCE = VCES, VGE = 0 V | - | - | 250 A | |
| IGES | G-E Leakage Current | VGE = VGES, VCE = 0 V | - | - | 400 nA | |
| On Characteristics | ||||||
| VGE(th) | G-E Threshold Voltage | IC = 5 mA, VCE = VGE | 2.5 | 3.5 | 4.5 | V |
| VCE(sat) | Collector to Emitter Saturation Voltage | IC = 5 A, VGE = 15 V | - | 2.9 | 3.6 | V |
| VCE(sat) | Collector to Emitter Saturation Voltage | IC = 5 A, VGE = 15 V, TC = 150oC | - | 4.5 | - | V |
| Dynamic Characteristics | ||||||
| Cies | Input Capacitance | VCE = 30 V, VGE = 0 V, f = 1 MHz | - | 209 | - | pF |
| Coes | Output Capacitance | - | 11 | - | pF | |
| Cres | Reverse Transfer Capacitance | - | 2 | - | pF | |
| Switching Characteristics (TC = 25oC) | ||||||
| Td(on) | Turn-On Delay Time | VCC = 600 V, IC = 5 A, RG = 30 , VGE = 15 V, Inductive Load | - | 4.8 | - | ns |
| Tr | Rise Time | - | 20.8 | - | ns | |
| Td(off) | Turn-Off Delay Time | - | 24.8 | - | ns | |
| Tf | Fall Time | - | 104 | - | ns | |
| Eon | Turn-On Switching Loss | - | 247 | - | uJ | |
| Eoff | Turn-Off Switching Loss | - | 94 | - | uJ | |
| Ets | Total Switching Loss | - | 341 | - | uJ | |
| Switching Characteristics (TC = 150oC) | ||||||
| Td(on) | Turn-On Delay Time | VCC = 600 V, IC = 5 A, RG = 30 , VGE = 15 V, Inductive Load | - | 4.8 | - | ns |
| Tr | Rise Time | - | 40 | - | ns | |
| Td(off) | Turn-Off Delay Time | - | 25.6 | - | ns | |
| Tf | Fall Time | - | 134 | - | ns | |
| Eon | Turn-On Switching Loss | - | 393 | - | uJ | |
| Eoff | Turn-Off Switching Loss | - | 114 | - | uJ | |
| Ets | Total Switching Loss | - | 507 | - | uJ | |
| Gate Charge | ||||||
| Qg | Total Gate Charge | VCC = 600 V, IC = 5 A, VGE = 15 V | - | 6.7 | - | nC |
| Qge | Gate to Emitter Charge | - | 1.8 | - | nC | |
| Qgc | Gate to Emitter Charge | - | 2.6 | - | nC | |
| Thermal Characteristics | ||||||
| RJC (IGBT) | Thermal Resistance, Junction to Case, Max. | - | - | 1.8 | oC/W | |
| RJA | Thermal Resistance, Junction to Ambient, Max. | Mounted on 1 squre PCB (FR4 or G-10 material) | - | - | 50 | oC/W |
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