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Power MOSFET P Channel type with 60 milliohm max on resistance and 30V VDS PJSEMI PJM3401PSC device

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Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

PJM3401PSC P-Channel Power MOSFET

The PJM3401PSC is a P-Channel Power MOSFET designed for load switching and PWM applications. It offers a VDS of -30V and a continuous drain current of -4.5A, with a low on-resistance of 60m(max) at -10V. This device is halogen and antimony free, making it an environmentally conscious choice for various electronic designs.

Product Attributes

  • Brand: PingJingSemi
  • Certifications: Halogen and Antimony Free

Technical Specifications

ParameterSymbolTest ConditionMin.Typ.Max.Units
Drain-Source Breakdown Voltage-V(BR)DSSVGS = 0V, ID=-250A30V
Drain to Source Leakage Current-IDSSVDS =-30V,VGS = 0V1A
Gate-Body Leakage CurrentIGSSVGS =12V, VDS = 0V100nA
Gate Threshold Voltage-VGS(th)VDS =VGS, ID =-250A0.71.3V
Drain-Source On-ResistanceRDS(on)VGS =-10V, ID =-4.1A60m
VGS =-4.5V, ID =-4A70m
VGS =-2.5V, ID =-1A90m
Forward TransconductancegFSVDS =-5V, ID =-5A8.5S
Input CapacitanceCissVDS = -15V,VGS = 0V,f=1MHz880pF
Output CapacitanceCoss105pF
Reverse Transfer CapacitanceCrss65pF
Turn-on Delay Timetd(on)VDS=-15V, VGS=-10VRGEN =6, ID=-4.2A7ns
Turn-on Rise Timetr3
Turn-off Delay Timetd(off)30
Turn-off Fall Timetf7
Total Gate ChargeQgVDD =-15V,VGS =-4.5V,ID =-4.2A12nC
Gate-Source ChargeQgs1.8
Gate-Drain ChargeQgd2.7
Diode Forward Voltage-VSDVGS =0V, IS=-4.2A1.2V
Continuous Drain Current-IDTA =254.5A
Power DissipationPDTA =251.4W
Junction and Storage Temperature RangeTJ, TSTG-55150C
Maximum Junction-to-Ambient Thermal ResistanceRJANote189C/W

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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