250V n channel mosfet OSEN IXTK90N25L2 featuring fast switching speed and improved dv dt capability
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Product Description
Product Overview
The IXTK90N25L2 is a 250V N-CHANNEL MOSFET from OSEN, designed for high-efficiency applications. It features fast switching speeds, high input impedance with low-level drive, tested avalanche energy, and improved dv/dt capability for high ruggedness. This MOSFET is suitable for high-efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.
Product Attributes
- Brand: OSEN
- Origin: http://www.osen.net.cn
- Publication Order Number: IXTK90N25L2
- Revision: Rev 21.2.10
- Package: TO-3PL
Technical Specifications
| Parameters | Unit | Conditions | Min | Typ | Max | |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | V | 250 | ||||
| Gate-Source Voltage-Continuous | V | 30 | ||||
| Drain Current-Continuous (Note 2) | A | 90 | ||||
| Drain Current-Single Pulsed (Note 1) | A | 360 | ||||
| Power Dissipation (Note 2) | W | 360 | ||||
| Max.Operating junction temperature | 150 | |||||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage Current (Note 1) | V | ID=250A VGS=0VTJ=25C | 250 | -- | -- | |
| Gate Threshold Voltage | V | VDS=VGSID=250A | 2.0 | -- | 4.0 | |
| Drain-Source On-Resistance | m | VGS=10VID=1.0A | -- | 35 | -- | |
| Gate-Body Leakage Current | nA | VGS=20VVDS=0 | -- | -- | 100 | |
| Zero Gate Voltage Drain Current | A | VDS=80VVGS=0 | -- | -- | 1 | |
| Forward Transconductance | S | VDS=20VID=10A | -- | 55 | -- | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | ns | VDS=125VID=45A RG=2.0Note 2 | -- | 50 | -- | |
| Rise Time | ns | -- | 180 | -- | ||
| Turn-Off Delay Time | ns | -- | 45 | -- | ||
| Fall Time | ns | -- | 160 | -- | ||
| Total Gate Charge | nC | VDS=125V VGS=10V ID=45ANote 2 | -- | 655 | -- | |
| Gate-Source Charge | nC | -- | 125 | -- | ||
| Gate-Drain Charge | nC | -- | 385 | -- | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | pF | VDS=25VVGS=0 f=1MHz | -- | 5880 | -- | |
| Output Capacitance | pF | -- | 2110 | -- | ||
| Reverse Transfer Capacitance | pF | -- | 380 | -- | ||
| Diode Forward Current (Note 2) | A | -- | -- | 90 | ||
| Diode Forward On-Voltage | V | IS=1AVGS=0 | -- | -- | 1.2 | |
| Thermal Resistance, Junction to Case | /W | -- | -- | 0.34 | ||
| Reverse Recovery Time | ns | VGS = 0V, IS = 90A, diF/dt =100A /s | -- | 360 | -- | |
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